Bukke Ravindra Naik, Mude Narendra Naik, Bae Jinbaek, Jang Jin
Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Korea.
ACS Appl Mater Interfaces. 2022 Sep 14;14(36):41508-41519. doi: 10.1021/acsami.2c08358. Epub 2022 Sep 6.
Thin-film transistor (TFT) is a essential device for future electronics driving the next level of digital transformation. The development of metal-oxide-semiconductor (MOS) TFTs is considered one of the most advantageous devices for next-generation, large-area flexible electronics. This study demonstrates the systematic study of the amorphous gallium oxide (a-GaO) and its application to nanocrystalline ZnO TFTs. The TFT with a-GaO/c-ZnO-stack channel exhibits a field-effect mobility of ∼41 cm V s and excellent stability under positive-bias-temperature stress. The a-GaO/c-ZnO-stack TFT on polyimide (PI) substrate exhibits a negligible threshold voltage shift upon 100k bending cycles with a radius of 3 mm and is very stable under environmental test. The smooth morphology with tiny grains of ∼12 nm diameter with fewer grain boundary states improves the charge transport in GaO/ZnO-stack TFT. The existence of amorphous a-GaO in between very thin ZnO layers helps to enhance the heterointerfaces and reduce the defect density in GaO/ZnO interface. Therefore, integrating a-GaO in the ZnO channel in stacked TFT can increase mobility and enhance stability for next-generation flexible TFT electronics.
薄膜晶体管（TFT）是推动下一级数字转型的未来电子学的关键器件。金属氧化物半导体（MOS）TFT的发展被认为是下一代大面积柔性电子学中最具优势的器件之一。本研究展示了对非晶氧化镓（a-GaO）的系统研究及其在纳米晶ZnO TFT中的应用。具有a-GaO/c-ZnO堆叠沟道的TFT表现出约41 cm² V⁻¹ s⁻¹的场效应迁移率以及在正偏压温度应力下的优异稳定性。聚酰亚胺（PI）衬底上的a-GaO/c-ZnO堆叠TFT在半径为3 mm的100k次弯曲循环后阈值电压偏移可忽略不计，并且在环境测试下非常稳定。直径约12 nm的微小晶粒且晶界态较少的光滑形貌改善了GaO/ZnO堆叠TFT中的电荷传输。非常薄的ZnO层之间非晶a-GaO的存在有助于增强异质界面并降低GaO/ZnO界面处的缺陷密度。因此，在堆叠TFT的ZnO沟道中集成a-GaO可以提高迁移率并增强下一代柔性TFT电子学的稳定性。
