Lee Jun Han, Duong Nguyen Xuan, Jung Min-Hyoung, Lee Hyun-Jae, Kim Ahyoung, Yeo Youngki, Kim Junhyung, Kim Gye-Hyeon, Cho Byeong-Gwan, Kim Jaegyu, Naqvi Furqan Ul Hassan, Bae Jong-Seong, Kim Jeehoon, Ahn Chang Won, Kim Young-Min, Song Tae Kwon, Ko Jae-Hyeon, Koo Tae-Yeong, Sohn Changhee, Park Kibog, Yang Chan-Ho, Yang Sang Mo, Lee Jun Hee, Jeong Hu Young, Kim Tae Heon, Oh Yoon Seok
Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea.
Adv Mater. 2022 Oct;34(42):e2205825. doi: 10.1002/adma.202205825. Epub 2022 Sep 15.
Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO is reported, which boosts the square-tensile-strain to BaTiO and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, it is experimentally demonstrated that three electrically controlled polar-ordering states lead to switchable and nonvolatile dielectric states for application of nondestructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates.
偶极子之间的相互作用常常会产生有趣的物理现象,例如磁性异质结构中的交换偏置以及多铁性材料中的磁电效应,这些现象推动了多功能异质结构的发展。然而,缺陷偶极子往往被视为会降低电子功能的不良因素。在此,报道了通过利用立方钙钛矿新衬底BaZrO实现铁电态与收缩态之间的确定性切换,这提高了施加于BaTiO的方形拉伸应变,并通过产生氧空位促进了四种变体的面内自发极化。第一性原理计算表明,一个氧空位与两个Ti离子形成的复合体构成了一个电荷中性的缺陷偶极子。对缺陷偶极子和自发极化的协同控制揭示了以偏置/收缩滞后回线为特征的三元面内极化态。此外,实验证明,三种电控极化有序态可实现可切换且非易失性的介电态,用于无损电介质存储器应用。这一发现为通过操纵缺陷偶极子来开发功能材料开辟了一条新途径,并为超越普遍使用的钙钛矿衬底推进异质外延提供了一个新平台。