Ma Xiaoxuan, Yuan Ning, Yang Wanting, Zhu Shuang, Shi Chenfei, Song Huan, Sun Zhiqiang, Kang Baojuan, Ren Wei, Cao Shixun
Department of Physics, Materials Genome Institute and International Center for Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China.
Kirchhoff Institute of Physics, Heidelberg University, INF 227, D-69120 Heidelberg, Germany.
Inorg Chem. 2022 Sep 19;61(37):14815-14823. doi: 10.1021/acs.inorgchem.2c02316. Epub 2022 Sep 8.
Field-tuning mechanisms of spin switching and spin reorientation (SR) transition were investigated in a series of high-quality single crystal samples of PrErFeO ( = 0, 0.1, 0.3, 0.5) prepared using the optical floating zone method. The single crystal quality, structure, and axis orientation were determined by room-temperature powder X-ray diffraction, back-reflection Laue X-ray diffraction, and Raman scattering at room temperature. Magnetic measurements indicate that the type and temperature region of SR transition are tuned by introducing different ratios of Pr doping ( = 0, 0.1, 0.3, 0.5). The trigger temperatures of spin switching and magnetization compensation temperature of PrErFeO crystals can be adjusted by doping with different proportions of Pr. Furthermore, the trigger temperature of the two types of spin switching in PrErFeO along the -axis can be regulated by an external field. Meanwhile, the isothermal magnetic field-triggered spin switching effect is also observed along the and -axes of PrErFeO. An in-depth understanding of the magnetic coupling and competition between the R and Fe magnetic sublattices, within the RFeO system, has important implications for advancing the practical applications of the relevant spin switching materials.
利用光学浮区法制备了一系列高质量的PrErFeO( = 0、0.1、0.3、0.5)单晶样品,研究了自旋开关和自旋重取向(SR)转变的场调谐机制。通过室温粉末X射线衍射、背反射劳厄X射线衍射和室温拉曼散射确定了单晶质量、结构和轴取向。磁性测量表明,通过引入不同比例的Pr掺杂( = 0、0.1、0.3、0.5)可以调节SR转变的类型和温度区域。PrErFeO晶体的自旋开关触发温度和磁化补偿温度可以通过不同比例的Pr掺杂来调节。此外,PrErFeO沿 -轴的两种自旋开关触发温度可以通过外部磁场来调节。同时,在PrErFeO的 和 -轴上也观察到了等温磁场触发的自旋开关效应。深入了解RFeO系统中R和Fe磁性亚晶格之间的磁耦合和竞争,对推进相关自旋开关材料的实际应用具有重要意义。