Witkowski Marcin, Starowicz Zbigniew, Zięba Adam, Adamczyk-Cieślak Bogusława, Socha Robert Piotr, Szawcow Oliwia, Kołodziej Grzegorz, Haras Maciej, Ostapko Jakub
University of Warsaw, Faculty of Chemistry, Pasteura 1, 02-093 Warsaw, Poland.
Polish Academy of Sciences, Institute of Metallurgy and Materials Science Polish Academy of Sciences, Reymonta 25, 30-059 Cracow, Poland.
Nanotechnology. 2022 Oct 7;33(50). doi: 10.1088/1361-6528/ac9065.
In this work we demonstrated the process of co-deposition of copper-tin sulfide species by the atomic layer deposition (ALD) technique using all-low-cost precursors. For the deposition of tin species, the tin(IV) chloride SnClwas used successfully for the first time in the ALD process. Moreover, we showed that the successful deposition of the tin sulfide component was conditioned by the pre-deposition of CuSlayer. The co-deposition of copper and tin sulfides components at 150 °C resulted in the in-process formation of the film containing CuSnS, CuSnSand-SnS phases. The process involving only tin precursor and HS did not produce the SnSspecies. The spectroscopic characteristic of the obtained materials were confronted with the literature survey, allowing us to discuss the methodology of the determination of ternary and quaternary sulfides purity by Raman spectroscopy. Moreover, the material characterisation with respect to the morphology (SEM), phase composition (XRD), surface chemical states (XPS), optical properties (UV-vis-NIR spectroscopy) and electric (Hall measurements) properties were provided. Finally, the obtained material was used for the formation of the p-n junction revealing the rectifying-characteristics.
在这项工作中，我们展示了使用全低成本前驱体通过原子层沉积（ALD）技术共沉积铜锡硫化物物种的过程。对于锡物种的沉积，四氯化锡（SnCl）首次在ALD过程中成功使用。此外，我们表明硫化锡组分的成功沉积取决于CuS层的预沉积。在150°C下铜和锡硫化物组分的共沉积导致在过程中形成包含CuSnS、CuSnS和 -SnS相的薄膜。仅涉及锡前驱体和HS的过程不会产生SnS物种。将所得材料的光谱特征与文献调查进行对比，使我们能够讨论通过拉曼光谱法测定三元和四元硫化物纯度的方法。此外，还提供了关于形态（SEM）、相组成（XRD）、表面化学状态（XPS）、光学性质（紫外 - 可见 - 近红外光谱）和电学（霍尔测量）性质的材料表征。最后，将所得材料用于形成具有整流特性的p - n结。
