Komenda Anna, Wojnicki Marek, Kharytonau Dzmitry, Mordarski Grzegorz, Csapó Edit, Socha Robert P
Faculty of Non-Ferrous Metals, AGH University of Science and Technology, Mickiewicza Ave. 30, 30-059 Krakow, Poland.
CBRTP SA Research and Development Center of Technology for Industry, Ludwika Waryńskiego 3A, 00-645 Warszawa, Poland.
Materials (Basel). 2023 Jul 15;16(14):5019. doi: 10.3390/ma16145019.
Thin films of tin (II) sulfide (SnS) were deposited onto a 500 µm thick copper substrate by a chemical bath method. The effect of sodium (Na) doping in these films was studied. The synthesis of the films was performed at temperatures of 60, 70, and 80 °C for 5 min. The microstructure of the SnS films analyzed by scanning electron microscopy (SEM) showed a compact morphology of the films deposited at 80 °C. The edges of the SnS grains were rounded off with the addition of a commercial surfactant. The thickness of different SnS layers deposited on the copper substrate was found to be 230 nm from spectroscopic ellipsometry and cross-section analysis using SEM. The deposition parameters such as temperature, surfactant addition, and sodium doping time did not affect the thickness of the layers. From the X-ray diffraction (XRD) analysis, the size of the SnS crystallites was found to be around 44 nm. Depending on the process conditions, Na doping affects the size of the crystallites in different ways. A study of the conductivity of SnS films provides a specific conductivity value of 0.3 S. The energy dispersive analysis of X-rays (EDAX) equipped with the SEM revealed the Sn:S stoichiometry of the film to be 1:1, which was confirmed by the X-ray photoelectron spectroscopy (XPS) analysis. The determined band-gap of SnS is equal to 1.27 eV and is in good agreement with the literature data.
通过化学浴法将硫化锡（SnS）薄膜沉积在500微米厚的铜基板上。研究了这些薄膜中钠（Na）掺杂的影响。薄膜的合成在60、70和80℃的温度下进行5分钟。通过扫描电子显微镜（SEM）分析的SnS薄膜的微观结构显示，在80℃沉积的薄膜具有致密的形态。添加商业表面活性剂后，SnS晶粒的边缘变圆。通过光谱椭偏仪和使用SEM的横截面分析发现，沉积在铜基板上的不同SnS层的厚度为230纳米。诸如温度、表面活性剂添加和钠掺杂时间等沉积参数不会影响层的厚度。通过X射线衍射（XRD）分析，发现SnS微晶的尺寸约为44纳米。根据工艺条件，Na掺杂以不同方式影响微晶的尺寸。对SnS薄膜电导率的研究提供了0.3 S的比电导率值。配备SEM的X射线能量色散分析（EDAX）显示薄膜的Sn:S化学计量比为1:1，这通过X射线光电子能谱（XPS）分析得到证实。确定的SnS带隙等于1.27 eV，与文献数据吻合良好。
