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利用界面电解质/有机半导体氧化还原注入反应和体空间电荷测量聚3-己基噻吩有机聚合物半导体薄膜中的孔隙结构

Measuring the Pores' Structure in P3HT Organic Polymeric Semiconductor Films Using Interface Electrolyte/Organic Semiconductor Redox Injection Reactions and Bulk Space-Charge.

作者信息

Schauer Franz

机构信息

Faculty of Applied Informatics, Tomas Bata University in Zlin, Nad Stranemi 4511, 760 05 Zlin, Czech Republic.

出版信息

Polymers (Basel). 2022 Aug 24;14(17):3456. doi: 10.3390/polym14173456.

Abstract

The article is another in a series of follow-up articles on the new spectroscopic method Energy Resolved-Electrochemical Impedance Spectroscopy (ER-EIS) and presents a continuation of the effort to explain the method for electronic structure elucidation and its possibilities in the study of organic polymeric semiconductors. In addition to the detailed information on the electronic structure of the investigated organic semiconductor, the paper deals with three of the hitherto not solved aspects of the method, (1) the pores structure, which has been embedded in the evaluation framework of the ER-EIS method and shown, how the basic quantities of the pores structure, the volume density of the pores' density coefficient = (0.038 ± 0.002) nm and the Brunauer-Emmet-Teller surface areas SABET SA == 34.5 mg may be found by the method, here for the archetypal poly(3-hexylthiophene-2,5-diyl) (P3HT) films. It is next shown, why the pore's existence needs not to endanger the spectroscopic results of the ER-EIS method, and a proper way of the ER-EIS data evaluation is presented to avoid it. It is highlighted (2), how may the measurements of the pore structure contribute to the determination of the, for the method ER-EIS important, real rate constant of the overall Marcus' D-A charge-transfer process for the poreless material and found its value k = (2.2 ± 0.6) × 10 cm s for P3HT films examined. It is also independently attempted (3) to evaluate the range of k, based on the knowledge of the individual reaction rates in a chain of reactions, forming the whole D-A process, where the slowest one (organic semiconductor hopping transport) determines the tentative total result k ≅ 10 cm s. The effect of injection of high current densities by redox interface reactions in the bulk of OS with built-in pores structure may be very interesting for the design of new devices of organic electronics.

摘要

本文是关于新型光谱方法——能量分辨电化学阻抗谱(ER-EIS)的系列后续文章之一,继续致力于解释该方法在阐明电子结构方面的原理及其在有机聚合物半导体研究中的应用可能性。除了关于所研究有机半导体电子结构的详细信息外,本文还探讨了该方法迄今尚未解决的三个方面:(1)孔隙结构,它已被纳入ER-EIS方法的评估框架,并展示了如何通过该方法确定孔隙结构的基本量,即孔隙密度系数的体积密度 = (0.038 ± 0.002) nm以及布鲁诺尔-埃米特-泰勒表面积SABET SA == 34.5 mg,此处以典型的聚(3-己基噻吩-2,5-二亚基)(P3HT)薄膜为例。接着说明了为什么孔隙的存在不一定会危及ER-EIS方法的光谱结果,并给出了一种合适的ER-EIS数据评估方法以避免这种情况。强调了(2)孔隙结构的测量如何有助于确定对于ER-EIS方法很重要的无孔材料整体马库斯D-A电荷转移过程的实际速率常数,并得出所研究的P3HT薄膜的该值k = (2.2 ± 0.6) × 10 cm s。还独立尝试(3)基于对构成整个D-A过程的一系列反应中各个反应速率的了解来评估k的范围,其中最慢的反应(有机半导体跳跃传输)决定了初步的总结果k ≅ 10 cm s。对于具有内置孔隙结构的有机半导体本体中通过氧化还原界面反应注入高电流密度的效应,可能对新型有机电子器件的设计非常有意义。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0880/9460914/ec9a984fe4fa/polymers-14-03456-g001.jpg

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