Shang Huabao, Yang Deren, Li Dongsheng
State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China.
Nanoscale. 2022 Sep 29;14(37):13824-13833. doi: 10.1039/d2nr02247h.
We prepared high-intensity luminescent films with a high LDP (Er luminescence lifetime-concentration product) of 1.54 × 10 s × cm, where lithium-doped erbium silicate grains are embedded in cristobalite. The near-infrared and up-conversion luminescence intensities of erbium silicate show ∼55 and 40 times enhancement by lithium-doping, respectively. Lithium-doping directly regulates the lattice structure of erbium silicate to enhance luminescence by reducing the crystal field symmetry around erbium, meanwhile, interstitial lithium does not dilute the concentration of erbium ions. Furthermore, lithium-containing dopants promote silica to crystallize, enhancing the luminescence of erbium silicate by reducing the interface defects. These films are expected to achieve high-gain film waveguide amplifiers in chip-scale optoelectronic integration. And this method opens up possibilities to be universally applicable to erbium compounds for enhancing luminescence by directly regulating the lattice structure.
我们制备了具有1.54×10 s×cm的高LDP（铒发光寿命 - 浓度乘积）的高强度发光薄膜，其中锂掺杂的硅酸铒颗粒嵌入方石英中。硅酸铒的近红外和上转换发光强度通过锂掺杂分别提高了约55倍和40倍。锂掺杂直接调节硅酸铒的晶格结构，通过降低铒周围的晶体场对称性来增强发光，同时，间隙锂不会稀释铒离子的浓度。此外，含锂掺杂剂促进二氧化硅结晶，通过减少界面缺陷来增强硅酸铒的发光。这些薄膜有望在芯片级光电集成中实现高增益薄膜波导放大器。并且这种方法为通过直接调节晶格结构来普遍适用于增强发光的铒化合物开辟了可能性。
