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溶液衍生YBaCuO -x超导薄膜超快瞬态液体辅助生长的动力学控制

Kinetic Control of Ultrafast Transient Liquid Assisted Growth of Solution-Derived YBa Cu O -x Superconducting Films.

作者信息

Rasi Silvia, Queraltó Albert, Banchewski Juri, Saltarelli Lavinia, Garcia Diana, Pacheco Adrià, Gupta Kapil, Kethamkuzhi Aiswarya, Soler Laia, Jareño Julia, Ricart Susagna, Farjas Jordi, Roura-Grabulosa Pere, Mocuta Cristian, Obradors Xavier, Puig Teresa

机构信息

Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, Bellaterra, Catalonia, 08193, Spain.

Departament de Química, Universitat Autònoma de Barcelona, Bellaterra, Catalonia, 08193, Spain.

出版信息

Adv Sci (Weinh). 2022 Nov;9(32):e2203834. doi: 10.1002/advs.202203834. Epub 2022 Sep 18.

Abstract

Transient liquid assisted growth (TLAG) is an ultrafast non-equilibrium growth process mainly governed by kinetic parameters, which are only accessible through fast in situ characterizations. In situ synchrotron X-ray diffraction (XRD) analysis and in situ electrical resistivity measurements are used to derive kinetic diagrams of YBa Cu O (YBCO) superconducting films prepared via TLAG and to reveal the unique peculiarities of the process. In particular, diagrams for the phase evolution and the YBCO growth rates have been built for the two TLAG routes. It is shown that TLAG transient liquids can be obtained upon the melting of two barium cuprate phases (and not just one), differentiated by their copper oxidation state. This knowledge serves as a guide to determine the processing conditions to reach high performance films at high growth rates. With proper control of these kinetic parameters, films with critical current densities of 2-2.6 MA cm at 77 K and growth rates between 100-2000 nm s are reached. These growth rates are 1.5-3 orders of magnitude higher than those of conventional methods.

摘要

瞬态液相辅助生长(TLAG)是一种超快的非平衡生长过程,主要由动力学参数控制,而这些参数只能通过快速原位表征来获取。利用原位同步辐射X射线衍射(XRD)分析和原位电阻率测量来推导通过TLAG制备的钇钡铜氧(YBCO)超导薄膜的动力学图,并揭示该过程的独特特性。特别是,已经为两种TLAG路线构建了相演变和YBCO生长速率的图。结果表明,通过熔化两种铜酸钡相(而不仅仅是一种)可以获得TLAG瞬态液体,这两种相由它们的铜氧化态区分。这些知识可作为确定在高生长速率下获得高性能薄膜的加工条件的指南。通过适当控制这些动力学参数,可以获得在77 K时临界电流密度为2 - 2.6 MA/cm²且生长速率在100 - 2000 nm/s之间的薄膜。这些生长速率比传统方法高1.5 - 3个数量级。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2593/9661858/7ff919b8a304/ADVS-9-2203834-g006.jpg

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