Zou Jianping, Cai Weifan, Zhang Qing
Centre for Micro- & Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore.
Nanotechnology. 2022 Oct 7;33(50). doi: 10.1088/1361-6528/ac9392.
Ultralow-power electronics is critical to wearable, portable, and implantable applications where the systems could only have access to very limited electrical power supply or even be self-powered. Here, we report on a type of Schottky barrier (SB) contacted single-walled carbon nanotube (SWCNT) network film field-effect-transistors (FETs) that are operated in the subthreshold region to achieve ultralow-power applications. The thin high-k gate dielectric and the overlap between the gate and the source electrodes offer highly efficient gate electrostatic control over the SWCNT channel and the SB at the source contact, resulting in steep subthreshold switching characteristics with a small subthreshold swing (∼67 mV dec), a large current on/off ratio (∼10), and a low off-state current (∼0.5 pA). A-channel metal-oxide-semiconductor inverter built with the subthreshold SB-SWCNT-FETs exhibits a well-defined logic functionality and small-signal amplification capability under a low supply voltage (∼0.5 V) and an ultralow power (∼0.05 pWm). The low-voltage and deep subthreshold operations reported here could lay an essential foundation for high-performance and ultralow-power SWCNTs-based electronics.
超低功耗电子学对于可穿戴、便携式和可植入应用至关重要，在这些应用中，系统只能获得非常有限的电源供应，甚至需要自供电。在此，我们报道了一种肖特基势垒（SB）接触的单壁碳纳米管（SWCNT）网络薄膜场效应晶体管（FET），其在亚阈值区域工作以实现超低功耗应用。薄的高k栅极电介质以及栅极与源电极之间的重叠提供了对SWCNT沟道和源极接触处的SB的高效栅极静电控制，从而产生陡峭的亚阈值开关特性，具有小的亚阈值摆幅（约67 mV/dec）、大的电流开/关比（约10）和低的关态电流（约0.5 pA）。由亚阈值SB-SWCNT-FET构建的A沟道金属氧化物半导体反相器在低电源电压（约0.5 V）和超低功耗（约0.05 pW/μm）下表现出明确的逻辑功能和小信号放大能力。本文报道的低电压和深亚阈值操作可为基于高性能和超低功耗SWCNT的电子学奠定重要基础。
