Al-Ghamdi Mohammed S, Bahnam Rafal Z, Karomi Ivan B
Department of Physics, Faculty of Science, King Abdulaziz University, P. O. Box 80203, Jeddah, 21589, Saudi Arabia.
University of Mosul, College of Education for Pure Science, Mosul, 41002, Iraq.
Heliyon. 2022 Sep 9;8(9):e10587. doi: 10.1016/j.heliyon.2022.e10587. eCollection 2022 Sep.
In this report, we measured experimentally the modal absorption spectra of the InP and InAsP quantum dot (QD) lasers using multi-section device technique. The optical absorption cross section ( ) and inhomogeneous broadening for the ground state (GS) and excited state (ES) were analyzed and calculated theoretically from the absorption spectra. The results showed that the InP QD laser exhibited to be and for GS and ES respectively, whereas for the InAsP QD material it was found as and for GS and ES respectively. Moreover, the inhomogeneous broadening in the GS increases from 35.6 eV to 63.6 eV when As was added to InP QD, similarly, the inhomogeneous broadening of ES increases from 46.9 eV to 103.8 eV. The alloying InP QDs with arsenic decreases the of the ground state (lasing state) and increases both inhomogeneous and linewidth broadenings. This finding may help the grower to control the growth conditions and the molecule fractions of the crystal to improve the spectral properties of the optoelectronics devices.
在本报告中，我们使用多段器件技术对InP和InAsP量子点（QD）激光器的模态吸收光谱进行了实验测量。从吸收光谱中理论分析并计算了基态（GS）和激发态（ES）的光吸收截面（ ）和非均匀展宽。结果表明，InP量子点激光器的基态和激发态的光吸收截面分别为 和 ，而对于InAsP量子点材料，基态和激发态的光吸收截面分别为 和 。此外，当在InP量子点中添加As时，基态的非均匀展宽从35.6 eV增加到63.6 eV，类似地，激发态的非均匀展宽从46.9 eV增加到103.8 eV。用砷合金化InP量子点会降低基态（激射态）的光吸收截面，并增加非均匀展宽和线宽展宽。这一发现可能有助于生长者控制晶体的生长条件和分子分数，以改善光电器件的光谱特性。
