Karomi Ivan, Smowton Peter M, Shutts Samuel, Krysa Andrey B, Beanland Richard
Opt Express. 2015 Oct 19;23(21):27282-91. doi: 10.1364/OE.23.027282.
We report on InAsP quantum dot lasers grown by MOVPE for 730-780 nm wavelength emission and compare performance with InP dot samples grown under similar conditions and with similar structures. 1-4 mm long, uncoated facet InAsP dot lasers emit between 760 and 775 nm and 2 mm long lasers with uncoated facets have threshold current density of 260 Acm(-2), compared with 150 Acm(-2) for InP quantum dot samples, which emit at shorter wavelengths, 715-725 nm. Pulsed lasing is demonstrated for InAsP dots up to 380 K with up to 200 mW output power. Measured absorption spectra indicate the addition of Arsenic to the dots has shifted the available transitions to longer wavelengths but also results in a much larger degree of spectral broadening. These spectra and transmission electron microscopy images indicate that the InAsP dots have a much larger degree of inhomogeneous broadening due to dot size variation, both from layer to layer and within a layer.
我们报道了通过金属有机气相外延（MOVPE）生长的用于730 - 780 nm波长发射的砷化铟磷（InAsP）量子点激光器，并将其性能与在类似条件下生长且结构相似的磷化铟（InP）量子点样品进行比较。1 - 4毫米长、未镀膜面的InAsP量子点激光器发射波长在760至775 nm之间，2毫米长、未镀膜面的激光器阈值电流密度为260 A/cm²，而发射波长较短（715 - 725 nm）的InP量子点样品的阈值电流密度为150 A/cm²。已证明InAsP量子点在高达380 K的温度下能实现脉冲激光发射，输出功率高达200 mW。测量的吸收光谱表明，向量子点中添加砷使可用跃迁向更长波长移动，但也导致光谱展宽程度大幅增加。这些光谱和透射电子显微镜图像表明，由于量子点尺寸在层与层之间以及层内存在变化，InAsP量子点具有更大程度的非均匀展宽。
