Wang Chao, Huang Hui, Zhang Miao-Rong, Song Wei-Xing, Zhang Long, Xi Rui, Wang Lu-Jia, Pan Ge-Bo
Division of Interdisciplinary Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 215123 Suzhou P. R. China
School of Nano Technology and Nano Bionics, University of Science and Technology of China 230026 Hefei P. R. China.
Nanoscale Adv. 2018 Dec 21;1(3):1232-1239. doi: 10.1039/c8na00243f. eCollection 2019 Mar 12.
A heterojunction of ZnO/porous GaN (ZnO/PGAN) was fabricated and directly applied to a diode-type humidity sensor. ZnO disks were loaded onto PGAN using a spraying process. The structure and surface morphology of the ZnO/PGAN were characterized using X-ray diffraction and scanning electron microscopy. The heterojunction displayed an excellent diode nature, which was investigated using photoluminescence spectra and - characteristics. The excellent transport capability of ZnO/PGAN contributes to enhanced electron transfer, and hence results in high sensitivity and quick response/recovery properties under different relative humidity (RH) levels. In the range of 12-96% RH, a fast sensing response time as low as 7 s and a recovery time of 13 s can be achieved. The simple design of a ZnO/PGAN based humidity sensor highlights its potential in various applications.
制备了ZnO/多孔GaN（ZnO/PGAN）异质结，并将其直接应用于二极管型湿度传感器。通过喷涂工艺将ZnO圆盘负载到PGAN上。利用X射线衍射和扫描电子显微镜对ZnO/PGAN的结构和表面形貌进行了表征。利用光致发光光谱和I-V特性对该异质结的优异二极管特性进行了研究。ZnO/PGAN优异的传输能力有助于增强电子转移，从而在不同相对湿度（RH）水平下具有高灵敏度和快速响应/恢复特性。在12-96%RH范围内，可实现低至7 s的快速传感响应时间和13 s的恢复时间。基于ZnO/PGAN的湿度传感器的简单设计突出了其在各种应用中的潜力。
