Georgia Institute of Technology, Atlanta, 30332, USA.
Adv Mater. 2010 Aug 10;22(30):3327-32. doi: 10.1002/adma.201000278.
A Schottky barrier can be formed at the interface between a metal electrode and a semiconductor. The current passing through the metal-semiconductor contact is mainly controlled by the barrier height and barrier width. In conventional nanodevices, Schottky contacts are usually avoided in order to enhance the contribution made by the nanowires or nanotubes to the detected signal. We present a key idea of using the Schottky contact to achieve supersensitive and fast response nanowire-based nanosensors. We have illustrated this idea on several platforms: UV sensors, biosensors, and gas sensors. The gigantic enhancement in sensitivity of up to 5 orders of magnitude shows that an effective usage of the Schottky contact can be very beneficial to the sensitivity of nanosensors.
肖特基势垒可以在金属电极和半导体之间的界面形成。通过金属-半导体接触的电流主要由势垒高度和势垒宽度控制。在传统的纳米器件中，通常避免使用肖特基接触，以增强纳米线或纳米管对检测信号的贡献。我们提出了一个使用肖特基接触来实现超灵敏和快速响应基于纳米线的纳米传感器的关键思想。我们已经在几个平台上说明了这个想法：紫外传感器、生物传感器和气体传感器。灵敏度高达 5 个数量级的巨大增强表明，肖特基接触的有效使用对纳米传感器的灵敏度非常有益。
