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用于高分辨率电子背散射衍射的线旋转重映射

Line-rotated remapping for high-resolution electron backscatter diffraction.

作者信息

Wang Yongzhe, Brodusch Nicolas, Gauvin Raynald, Zeng Yi

机构信息

The State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxu Road, Shanghai 200050, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.

Minning and Materials Engineering Department, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, Canada.

出版信息

Ultramicroscopy. 2022 Dec;242:113623. doi: 10.1016/j.ultramic.2022.113623. Epub 2022 Sep 17.

DOI:10.1016/j.ultramic.2022.113623
PMID:36150291
Abstract

A novel approach, termed line-rotated remapping (LRR), for high resolution electron backscatter diffraction is proposed to remap patterns with large rotation. In LRR, the displacements during the first-pass cross-correlation is modified to a function of the corresponding Kikuchi lines and the points on the reference pattern. Then, the finite rotation matrix to remap the test pattern to a similar orientation of the reference pattern is determined using the parameters of the Kikuchi lines. We apply LRR to simulated Si patterns with random orientations, and obtain measurement errors below ∼1.0 × 10 for lattice rotations up to ∼26°. The maximum angle that may be remapped by LRR decreases with the distance between the specimen and the screen, which in turn reduces the number of matched Kikuchi lines. We also employ LRR in experiments to quantitatively characterize rotations and elastic strains of a Ni single crystal subject to nanoindentation and tension measurements. Although more experimental data on pattern center and image contrast are required to properly assess the performance of LRR, our method is a promising technique to improve strain measurements in the presence of large rotations.

摘要

提出了一种用于高分辨率电子背散射衍射的新方法,称为线旋转重映射(LRR),用于对具有大旋转角度的图案进行重映射。在LRR中,将首次互相关过程中的位移修改为相应菊池线和参考图案上各点的函数。然后,利用菊池线的参数确定将测试图案重映射到与参考图案相似取向的有限旋转矩阵。我们将LRR应用于随机取向的模拟硅图案,并在晶格旋转角度高达约26°时获得了低于约1.0×10的测量误差。LRR能够重映射的最大角度随样品与屏幕之间的距离减小而减小,这反过来又减少了匹配菊池线的数量。我们还在实验中采用LRR来定量表征镍单晶在纳米压痕和拉伸测量下的旋转和弹性应变。尽管需要更多关于图案中心和图像对比度的实验数据来正确评估LRR的性能,但我们的方法是一种在存在大旋转时改善应变测量的有前途的技术。

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