Peng F, Zhang Y, Zhang J, Lin C, Jiang C, Miao H, Zeng Y
The State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
J Microsc. 2020 Jan;277(1):3-11. doi: 10.1111/jmi.12856. Epub 2019 Dec 29.
In this study, a new method is established for indexing electron backscatter diffraction (EBSD) patterns assisted by the Kikuchi bandwidth. This method utilises both interplanar angles and interplanar spacings to determine the Miller indices of the Kikuchi bands in EBSD patterns to improve the efficiency and precision of indexing in the EBSD system. Two samples of single-crystal silicon were investigated to validate the method based on (a) the detection of the edges of the EBSD Kikuchi bands and (b) the calculation of the Kikuchi bandwidths. The relationship between the Kikuchi bandwidth and the interplanar spacing at different positions was established, and the interplanar spacing of the corresponding lattice plane of each Kikuchi band was calculated with the use of the Kikuchi bandwidth information. The relative errors between the theoretical and experimental interplanar spacings are small, with an average relative error of 2.6% and a minimum relative error of 1.04%. The results indicated that the Miller index of each Kikuchi band can be determined accurately with this new method. It is demonstrated that use of this new method improves the efficiency and accuracy of the EBSD system. LAY DESCRIPTION: Electron backscatter diffraction (EBSD) is a scanning electron microscope-based technique. In our work, a new method is established for indexing EBSD patterns assisted by the Kikuchi bandwidth. This method utilizes both interplanar angles and interplanar spacings to determine the Miller indices of the Kikuchi bands in EBSD patterns to improve the efficiency and precision of indexing in the EBSD system. Two samples of single-crystal silicon were investigated to validate the method based on a) the detection of the edges of the EBSD Kikuchi bands and b) the calculation of the Kikuchi bandwidths. The relationship between the Kikuchi bandwidth and the interplanar spacing at different positions was established, and the interplanar spacing of the corresponding lattice plane of each Kikuchi band was calculated with the use of the Kikuchi bandwidth information. The relative errors between the theoretical and experimental interplanar spacings are small, with an average relative error of 2.6% and a minimum relative error of 1.04%. Compared with the results reported in the literature, the width-assisted Kikuchi pattern indexing method can well distinguish some cases with similar angles, and reduce the possibility of mis-indexing. After the introduction of the width information of the Kikuchi bands, the screening range can be narrowed by determining the crystal plane family, and the efficiency and accuracy of the indexing process can thus be improved. Specifically, for some materials with increased symmetry, such as cubic crystal materials, it is necessary to use the interplanar spacing for indexing when the interplanar angles are not diagnostic. The results indicated that the Miller index of each Kikuchi band can be determined accurately with this new method. It is demonstrated that use of this new method improves the efficiency and accuracy of the EBSD system.
在本研究中,建立了一种由菊池带宽辅助的电子背散射衍射(EBSD)花样标定新方法。该方法利用晶面角和晶面间距来确定EBSD花样中菊池带的密勒指数,以提高EBSD系统中标定的效率和精度。研究了两个单晶硅样品,基于(a)EBSD菊池带边缘的检测和(b)菊池带宽的计算来验证该方法。建立了不同位置处菊池带宽与晶面间距之间的关系,并利用菊池带宽信息计算了每个菊池带对应晶格平面的晶面间距。理论晶面间距与实验晶面间距之间的相对误差较小,平均相对误差为2.6%,最小相对误差为1.04%。结果表明,用这种新方法可以准确确定每个菊池带的密勒指数。证明了使用这种新方法提高了EBSD系统的效率和准确性。通俗描述:电子背散射衍射(EBSD)是一种基于扫描电子显微镜的技术。在我们的工作中,建立了一种由菊池带宽辅助的EBSD花样标定新方法。该方法利用晶面角和晶面间距来确定EBSD花样中菊池带的密勒指数,以提高EBSD系统中标定的效率和精度。研究了两个单晶硅样品,基于a)EBSD菊池带边缘的检测和b)菊池带宽的计算来验证该方法。建立了不同位置处菊池带宽与晶面间距之间的关系,并利用菊池带宽信息计算了每个菊池带对应晶格平面的晶面间距。理论晶面间距与实验晶面间距之间的相对误差较小,平均相对误差为2.6%,最小相对误差为1.04%。与文献报道的结果相比,带宽辅助菊池花样标定方法能够很好地区分一些角度相似的情况,减少误标定的可能性。引入菊池带的宽度信息后,通过确定晶面族可以缩小筛选范围,从而提高标定过程的效率和准确性。具体而言,对于一些对称性增加的材料,如立方晶体材料,当晶面角无法判断时,需要使用晶面间距进行标定。结果表明,用这种新方法可以准确确定每个菊池带的密勒指数。证明了使用这种新方法提高了EBSD系统的效率和准确性。