Zhou Bo, Liu Zexiang, Fang Shaofan, Nie Jingheng, Zhong Haizhe, Hu Hanlin, Li Henan, Shi Yumeng
School of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China.
J Phys Chem Lett. 2022 Oct 6;13(39):9140-9147. doi: 10.1021/acs.jpclett.2c02759. Epub 2022 Sep 27.
Sb doping confers highly efficient and color-diverse broadband light emission to all-inorganic metal-halide perovskites. However, the emission mechanism is still under debate. Herein, a trace amount of Sb ions (<0.1% atomic percentage) doping in the typical all-inorganic perovskites CsNaInCl, RbInCl, and CsInCl·HO allows universal observation of the fine structure in the photoluminescence excitation spectrum of the electron. A lifetime mapping method was utilized to reveal the origin of broadband emission triggered by Sb doping, by which various fluorescence components can be differentiated. In particular, free-exciton emission was identified at the high-energy end of the broadband emission for all three doped systems. The excitation-energy- and temperature-dependent fluorescence decay further indicates the existence and origin of self-trapped states. The observed structural and vibrational symmetry-dependent emission behaviors suggest dipole interactions can dramatically alter Stokes-shift energy and modulate the light-emitting wavelength.
锑掺杂赋予全无机金属卤化物钙钛矿高效且颜色多样的宽带发光特性。然而,其发光机制仍存在争议。在此,在典型的全无机钙钛矿CsNaInCl、RbInCl和CsInCl·HO中掺杂痕量的锑离子(原子百分比<0.1%),使得能够普遍观察到电子光致发光激发光谱中的精细结构。利用寿命映射方法揭示了由锑掺杂引发的宽带发射的起源,通过该方法可以区分各种荧光成分。特别是,在所有三个掺杂体系的宽带发射的高能端都识别出了自由激子发射。激发能量和温度相关的荧光衰减进一步表明了自陷态的存在及其起源。观察到的与结构和振动对称性相关的发射行为表明,偶极相互作用可以显著改变斯托克斯位移能量并调节发光波长。