Hu Yu-Lin, Zhu Yi-Lin, Gu Shi-Ying, Xu Jia-Qing, Gan Zhi-Xing, Shi Chuan-Guo
School of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, China.
School of Public Health, Nantong University, Nantong 226019, China.
Nanomaterials (Basel). 2025 Jun 28;15(13):1002. doi: 10.3390/nano15131002.
Mn doped metal halide that can be grown by a facile solution reaction is a promising low-cost afterglow material. However, the afterglow mechanism is still elusive. Using a facile method to modulate afterglow time is still to be explored. In this work, we reveal that the afterglow of CsNaAgInCl:y%Mn can be significantly modulated by Mn concentration. We propose that replacing Ag with Mn leads to the appearance of interstitial Ag, which temporally store the photogenerated electrons (Ag++e-→Ag). After the removal of excitation, the gradual recombination between residual holes and stored electrons [h++Ag++e-→hν+Ag+] explains the afterglow. However, excessive Mn doping at interstitial sites does not bring about more interstitial Ag but instead introduces nonradiative traps. Therefore, as the Mn concentration increases, the afterglow time increases from 350 s to 530 s and then decreases to 230 s, reaching a maximum at y = 40. Thus, a dynamic optical information storage and encryption application is demonstrated based on the modulated afterglow time.
通过简便的溶液反应即可生长的锰掺杂金属卤化物是一种很有前景的低成本余辉材料。然而，其余辉机制仍不明确。利用简便方法调节余辉时间仍有待探索。在这项工作中，我们揭示了CsNaAgInCl:y%Mn的余辉可通过锰浓度得到显著调节。我们提出，用锰取代银会导致间隙银的出现，间隙银会暂时存储光生电子（Ag++e-→Ag）。在去除激发后，残余空穴与存储电子之间的逐渐复合[h++Ag++e-→hν+Ag+]解释了余辉现象。然而，间隙位置的过量锰掺杂不会产生更多的间隙银，反而会引入非辐射陷阱。因此，随着锰浓度的增加，余辉时间从350秒增加到530秒，然后降至230秒，在y = 40时达到最大值。因此，基于调制后的余辉时间展示了一种动态光学信息存储和加密应用。
