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新型Janus MoSiGeN纳米片:对NO和NO₂气体分子的吸附行为及传感性能

Novel Janus MoSiGeN nanosheet: adsorption behaviour and sensing performance for NO and NO gas molecules.

作者信息

Weng Yixin, Ma Xinguo, Yuan Gang, Lv Hui, Yuan Zhongyong

机构信息

School of Science, Hubei University of Technology Wuhan 430068 China

Hubei Engineering Technology Research Centre of Energy Photoelectric Device and System, Hubei University of Technology Wuhan 430068 China

出版信息

RSC Adv. 2022 Sep 1;12(38):24743-24751. doi: 10.1039/d2ra03957e. eCollection 2022 Aug 30.

Abstract

A novel Janus MoSiGeN nanosheet is proposed for detecting poisonous gas molecules. Herein, the adsorption behaviour and sensing performance of both sides of the MoSiGeN monolayer to NO and NO gas molecules were investigated by first-principles calculations. Firstly, it is found that the MoSiGeN monolayer exhibits structural stability and indirect gap semiconductor characteristics. The largest adsorption energy of NO molecules on the MoSiGeN monolayer is -0.24 eV, which is higher than the -0.13 eV for NO molecules. Of course, the physisorption between gas molecules and the MoSiGeN monolayer appears with slight charge transfer. It is confirmed that NO molecules and NO molecules act as electron donors and electron acceptors, respectively. Meanwhile, the generation of small band gaps and impurity levels in the electronic structures after gas adsorption is in favour of the enhancement of electronic conductivity. Furthermore, the longest recovery times of NO and NO molecules are predicted to be 0.15 and 10.67 ns at room temperature, and the lateral diffusion at the surface requires crossing a large energy barrier. These findings provide indisputable evidence for further design and fabrication of highly sensitive gas sensors based on the MoSiGeN monolayer.

摘要

提出了一种新型的Janus MoSiGeN纳米片用于检测有毒气体分子。在此,通过第一性原理计算研究了MoSiGeN单层两侧对NO和NO₂气体分子的吸附行为和传感性能。首先,发现MoSiGeN单层具有结构稳定性和间接带隙半导体特性。NO分子在MoSiGeN单层上的最大吸附能为-0.24 eV,高于NO₂分子的-0.13 eV。当然,气体分子与MoSiGeN单层之间存在物理吸附,并伴有轻微的电荷转移。证实NO分子和NO₂分子分别作为电子供体和电子受体。同时,气体吸附后电子结构中产生的小带隙和杂质能级有利于电子电导率的增强。此外,预测在室温下NO和NO₂分子的最长恢复时间分别为0.15和10.67 ns,且表面的横向扩散需要跨越较大的能垒。这些发现为基于MoSiGeN单层的高灵敏度气体传感器的进一步设计和制造提供了确凿的证据。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/43b1/9433950/28b8e29986f2/d2ra03957e-f1.jpg

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