Shi Jia, Quan Wenjing, Chen Xinwei, Chen Xiyu, Zhang Yongwei, Lv Wen, Yang Jianhua, Zeng Min, Wei Hao, Hu Nantao, Su Yanjie, Zhou Zhihua, Yang Zhi
Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Institute of Marine Equipment, Shanghai Jiao Tong University, Shanghai 200240, P. R. China.
Phys Chem Chem Phys. 2021 Sep 14;23(34):18359-18368. doi: 10.1039/d1cp02011k. Epub 2021 Aug 18.
Two-dimensional (2D) layered nanomaterials have attracted increasing attention in gas sensing due to their graphene-like properties. Although the gas sensing performances of 2D layered semiconductor transition metal dichalcogenides (TMDs), including MoS, WS, MoSe and WSe, have been extensively studied, it has remained a grand challenge to develop a high-performance gas sensing material that can meet practical applications. Tantalum disulfide (TaS), as a metallic TMD with low resistance and high current signal, has great promise in high-performance gas sensing. In stark contrast with Mo and W, Ta has a stronger positive charge, which contributes to a higher surface energy to capture gas molecules. Herein, through calculating the adsorption energy, charge transfer, electronic structure, and work function of the adsorption system with first-principles calculations, we first systematically studied the performance of noble metal atom substitution doping on a TaS monolayer for toxic nitrogen-containing gas (NH, NO and NO) sensing. We found that the TaS monolayer exhibits excellent NO sensing performance with an adsorption energy of 0.49 eV and a charge transfer of 0.17 e. However, it has a considerable adsorption energy (-0.22 and -0.39 eV) to NH and NO molecules, but a low charge transfer (-0.03 and 0.04 e) between the gas molecules and the TaS monolayer. To further enhance the gas-sensing performance of the TaS monolayer, noble metal atoms (Ag, Au, Pd and Pt) were substitutionally doped into the lattice of the TaS monolayer. The results showed that the values of adsorption energy and charge transfer can be significantly improved, and the electronic structure and work function of the doping system has also greatly changed, which makes it much easier to detect the changes in electrical signal due to gas adsorption. Our work indicates that the intrinsic as well as the noble metal doped TaS monolayers are promising candidates for high-performance gas sensors.
二维(2D)层状纳米材料因其类似石墨烯的特性而在气体传感领域受到越来越多的关注。尽管二维层状半导体过渡金属二硫属化物(TMDs),包括MoS、WS、MoSe和WSe的气体传感性能已得到广泛研究,但开发一种能满足实际应用的高性能气体传感材料仍然是一个巨大的挑战。二硫化钽(TaS)作为一种具有低电阻和高电流信号的金属TMD,在高性能气体传感方面具有巨大潜力。与Mo和W形成鲜明对比的是,Ta具有更强的正电荷,这有助于提高表面能以捕获气体分子。在此,通过第一性原理计算吸附体系的吸附能、电荷转移、电子结构和功函数,我们首次系统地研究了贵金属原子取代掺杂TaS单层对有毒含氮气体(NH、NO和NO)传感的性能。我们发现TaS单层对NO具有优异的传感性能,吸附能为0.49 eV,电荷转移为0.17 e。然而,它对NH和NO分子具有相当大的吸附能(分别为-0.22和-0.39 eV),但气体分子与TaS单层之间的电荷转移较低(分别为-0.03和0.04 e)。为了进一步提高TaS单层的气敏性能,将贵金属原子(Ag、Au、Pd和Pt)取代掺杂到TaS单层的晶格中。结果表明,吸附能和电荷转移的值可以显著提高,并使掺杂体系的电子结构和功函数也发生了很大变化,这使得更容易检测到由于气体吸附引起的电信号变化。我们的工作表明,本征以及贵金属掺杂的TaS单层是高性能气体传感器的有前途的候选材料。