Wang De-Yang, Jiang Qi, Kuroda Kenta, Kawaguchi Kaishu, Harasawa Ayumi, Yaji Koichiro, Ernst Arthur, Qian Hao-Ji, Liu Wen-Jing, Zha He-Ming, Jiang Zhi-Cheng, Ma Ni, Mei Hong-Ping, Li Ang, Kondo Takeshi, Qiao Shan, Ye Mao
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Phys Rev Lett. 2022 Sep 30;129(14):146401. doi: 10.1103/PhysRevLett.129.146401.
Topological materials have broad application prospects in quantum computing and spintronic devices. Among them, dual topological materials with low dimensionality provide an excellent platform for manipulating various topological states and generating highly conductive spin currents. However, direct observation of their topological surface states still lacks. Here, we reveal the coexistence of the strong and weak topological phases in a quasi-one-dimensional material, TaNiTe_{5}, by spin- and angle- resolved photoemission spectroscopy. The surface states protected by weak topological order forms Dirac-node arcs in the vicinity of the Fermi energy, providing the opportunity to develop spintronics devices with high carrier density that is tunable by bias voltage.
拓扑材料在量子计算和自旋电子器件中具有广阔的应用前景。其中，低维双拓扑材料为操控各种拓扑态和产生高传导自旋电流提供了一个优异的平台。然而，对其拓扑表面态的直接观测仍然缺乏。在此，我们通过自旋和角分辨光电子能谱揭示了准一维材料TaNiTe₅中强拓扑相和弱拓扑相的共存。由弱拓扑序保护的表面态在费米能附近形成狄拉克节点弧，为开发具有可通过偏置电压调节的高载流子密度的自旋电子器件提供了机会。
