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基于第一性原理计算对二维结构ZnO的结构、电子及光学性质的研究

Investigations on structural, electronic and optical properties of ZnO in two-dimensional configurations by first-principles calculations.

作者信息

Wang Hong-Ji, Yang Jun-Tao, Xu Chang-Ju, Huang Hai-Ming, Min Qing, Xiong Yong-Chen, Luo Shi-Jun

机构信息

School of Mathematics, Physics and Optoelectronic Engineering, Hubei University of Automotive Technology (HUAT), 167 Checheng West Road, Shiyan, Hubei Province 442002, People's Republic of China.

International Center of Quantum and Molecule Structure (ICQMS), Shanghai University, E-Building, Shangda Road 99, Baoshan District, Shanghai 200444, People's Republic of China.

出版信息

J Phys Condens Matter. 2022 Nov 3;51(1). doi: 10.1088/1361-648X/ac9d17.

Abstract

The electronic structures and optical properties of two-dimensional (2D) ZnO monolayers in a series of configurations were systematically investigated by first-principles calculations with Hubbardevaluated by the linear response approach. Three types of 2D ZnO monolayers, as planer hexagonal-honeycomb (Plan), double-layer honeycomb (Dlhc), and corrugated tetragonal (Tile) structures, show a mechanical and dynamical stability, while the Dlhc-ZnO is the most energetically stable configuration and Plan-ZnO is the second one. Each 2D ZnO monolayer behaves as a semiconductor with that Plan-, Dlhc-ZnO have a direct band gap of 1.81 eV and 1.85 eV at thepoint, respectively, while Tile-ZnO has an indirect band gap of 2.03 eV. Interestingly, the 2D ZnO monolayers all show a typical near-free-electron character for the bottom conduction band with a small effective mass, leading to a tremendous optical absorption in the whole visible and ultraviolet window, and this origination was further confirmed by the transition dipole moment. Our investigations suggest a potential candidate in the photoelectric field and provide a theoretical guidance for the exploration of wide-band-gap 2D semiconductors.

摘要

通过采用线性响应方法对哈伯德进行评估的第一性原理计算,系统地研究了一系列构型的二维(2D)ZnO单层的电子结构和光学性质。三种类型的二维ZnO单层,即平面六边形蜂窝状(Plan)、双层蜂窝状(Dlhc)和波纹四方(Tile)结构,表现出机械和动力学稳定性,而Dlhc-ZnO是能量上最稳定的构型,Plan-ZnO是第二稳定的构型。每个二维ZnO单层都表现为半导体,其中Plan-ZnO、Dlhc-ZnO在该点的直接带隙分别为1.81 eV和1.85 eV,而Tile-ZnO具有2.03 eV的间接带隙。有趣的是,二维ZnO单层在底部导带都表现出典型的近自由电子特征,有效质量较小,导致在整个可见光和紫外窗口有巨大的光吸收,并且这种起源通过跃迁偶极矩得到了进一步证实。我们的研究表明其在光电领域有潜在的应用前景,并为宽带隙二维半导体的探索提供了理论指导。

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