Vogel Anna, Rabenbauer Alfred, Deng Philipp, Steib Ruben, Böger Thorben, Zeier Wolfgang G, Siegel Renée, Senker Jürgen, Daisenberger Dominik, Nisi Katharina, Holleitner Alexander W, Venturini Janio, Nilges Tom
School of Natural Sciences (NAT), Department of Chemistry, Synthesis and Characterization of Innovative Materials group, Technical University of Munich, Lichtenbergstraße 4, 85748, Garching b. München, Germany.
Institute of Inorganic and Analytical Chemistry, University of Münster, Corrensstraße 28/30, 48149, Münster, Germany.
Adv Mater. 2023 Jan;35(2):e2208698. doi: 10.1002/adma.202208698. Epub 2022 Nov 24.
A diode requires the combination of p- and n-type semiconductors or at least the defined formation of such areas within a given compound. This is a prerequisite for any IT application, energy conversion technology, and electronic semiconductor devices. Since the discovery of the pnp-switchable compound Ag Te Br in 2009, it is in principle possible to fabricate a diode from a single material without adjusting the semiconduction type by a defined doping level. Often a structural phase transition accompanied by a dynamic change of charge carriers or a charge density wave within certain substructures are responsible for this effect. Unfortunately, the high pnp-switching temperature between 364 and 580 K hinders the application of this phenomenon in convenient devices. This effect is far removed from a suitable operation temperature at ambient conditions. Ag Cu Te Cl is a room temperature pnp-switching material and the first single-material position-independent diode. It shows the highest ever reported Seebeck coefficient drop that takes place within a few Kelvin. Combined with its low thermal conductivity, it offers great application potential within an accessible and applicable temperature window. Ag Cu Te Cl and pnp-switching materials have the potential for applications and processes where diodes, transistors, or any defined charge separation with junction formation are utilized.
二极管需要p型和n型半导体相结合，或者至少在给定化合物中形成这种特定区域。这是任何信息技术应用、能量转换技术和电子半导体器件的前提条件。自2009年发现可实现pnp转换的化合物AgTeBr以来，原则上有可能用单一材料制造二极管，而无需通过特定的掺杂水平来调整半导体类型。通常，结构相变伴随着电荷载流子的动态变化或某些子结构内的电荷密度波是造成这种效应的原因。不幸的是，364至580K之间的高pnp转换温度阻碍了这种现象在便捷设备中的应用。这种效应与环境条件下合适的工作温度相差甚远。AgCuTeCl是一种室温pnp转换材料，也是首个与位置无关的单一材料二极管。它显示出在几开尔文范围内出现了有史以来报道的最高塞贝克系数下降。结合其低导热率，它在可及且适用的温度窗口内具有巨大的应用潜力。AgCuTeCl和pnp转换材料在利用二极管、晶体管或任何形成结的特定电荷分离的应用和工艺中具有应用潜力。
