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BiQ、PbQ和BiCuQO(Q = Se、Te)中热电功率的表面现象:其能带边缘隐藏的一维特性导致高热电功率。

Skin-Deep Aspect of Thermopower in BiQ, PbQ, and BiCuQO (Q = Se, Te): Hidden One-Dimensional Character of Their Band Edges Leading to High Thermopower.

作者信息

Lee Changhoon, Park Taesu, Shim Ji Hoon, Whangbo Myung-Hwan

机构信息

Max Planck POSTECH Center for Complex Phase of Materials, Pohang University of Science and Technology, Pohang 37673, Korea.

Department of Chemistry, Pohang University of Science and Technology, Pohang 37673, Korea.

出版信息

Acc Chem Res. 2022 Oct 4;55(19):2811-2820. doi: 10.1021/acs.accounts.2c00255. Epub 2022 Sep 21.

Abstract

ConspectusThermoelectric (TE) materials have received much attention because of their ability to convert heat energy to electrical energy. At a given temperature , the efficiency of a TE material for this energy conversion is measured by the figure of merit , which is related to the thermopower (or Seebeck coefficient) , the thermal conductivity κ, and the electrical conductivity σ of the TE material as = (σ)/κ. BiQ and PbQ (Q = Se, Te) are efficient TE materials with high , although they are not ecofriendly and their stability is poor at high temperature. In principle, a TE material can have a high if it has a low thermal conductivity and a high electrical conductivity, but the latter condition is hardly met in a real material because the parameters , σ and κ have a conflicting dependence on material properties. The difficulty in searching for TE materials of high is even more exasperated because the relationship between the thermopower and the carrier density (hereafter, the -vs- relationship) for the well-known hole-doped samples of BiCuSeO showed that the hole carriers responsible for their thermopower are associated largely with the electronic states lying within ∼0.5 eV of its valence band maximum (VBM). Thus, the states governing the TE properties lie in the "skin-deep" region from the VBM. For electron-doped TE systems, the electron carriers responsible for their thermopower should also be associated with the electronic states lying within ∼0.5 eV of the conduction band minimum (CBM). This makes it difficult to predict TE materials of high . One faces a similar skin-deep phenomenon in searching for superconductors of high transition temperature because the transition from a normal metallic to a superconducting state involves the normal metallic states in the vicinity of the Fermi level E. Other skin-deep phenomena in metallic compounds include the formation of charge density wave (CDW), which involves the electronic states in the vicinity of their Fermi levels. For magnetic materials of transition-metal ions, the preferred orientation of their spin moments is a skin-deep phenomenon because it is governed by the interaction between the highest-occupied and the lowest unoccupied d-states of these ions. In the present work we probe the issues concerning how to find the possible range of thermopower expected for a given TE material and hence how to recognize what experimental values of thermopower are expected or unusual. For these purposes, we analyze the accumulated and data on the three well-studied TE materials, BiQ, PbQ, and BiCuQO (Q = Se, Te), as representative examples, in terms of the ideal theoretical -vs- relationships, which we determine for their defect-free BiQ, PbQ, and BiCuQO structures using density functional theory (DFT) calculations under the rigid band approximation. We find that the general trends in the experimental -vs- relationships are reasonably well explained by the calculated -vs- relationships, and the carrier densities covering these relationships are associated with the states lying within ∼0.5 eV from their band edges confirming the skin-deep nature of their thermoelectric properties. Despite the fact that these TE materials are not one-dimensional (1D) in structure, they mostly possess sharp density-of-state peaks around their band edges because their band dispersions have a hidden 1D character so their thermopower is generally high in magnitude.

摘要

综述

热电(TE)材料因其能够将热能转化为电能而备受关注。在给定温度下,TE材料这种能量转换的效率由品质因数衡量,品质因数与TE材料的热功率(或塞贝克系数)、热导率κ以及电导率σ相关,即 = (σ)/κ。BiQ和PbQ(Q = Se、Te)是具有高品质因数的高效TE材料,尽管它们不环保且在高温下稳定性较差。原则上,如果TE材料具有低的热导率和高的电导率,那么它可以具有高的品质因数,但在实际材料中后一个条件很难满足,因为参数 、σ和κ对材料性质有着相互矛盾的依赖关系。寻找高品质因数的TE材料的困难甚至更加突出,因为对于著名的空穴掺杂的BiCuSeO样品,其热功率与载流子密度之间的关系(以下简称 -vs- 关系)表明,对其热功率起作用的空穴载流子在很大程度上与位于其价带最大值(VBM)约0.5 eV范围内的电子态相关。因此,决定TE性质的态位于从VBM起的“表层”区域。对于电子掺杂的TE体系,对其热功率起作用的电子载流子也应与位于导带最小值(CBM)约0.5 eV范围内的电子态相关。这使得预测高品质因数的TE材料变得困难。在寻找高转变温度的超导体时人们也面临类似的表层现象,因为从正常金属态到超导态的转变涉及费米能级E附近的正常金属态。金属化合物中的其他表层现象包括电荷密度波(CDW)的形成,这涉及它们费米能级附近的电子态。对于过渡金属离子的磁性材料,其自旋矩的择优取向是一种表层现象,因为它由这些离子的最高占据d态和最低未占据d态之间的相互作用所决定。在本工作中,我们探讨了关于如何找到给定TE材料预期的热功率可能范围的问题,进而探讨如何识别预期的或异常的热功率实验值。出于这些目的,我们以理想的理论 -vs- 关系为依据,分析了三种经过充分研究的TE材料BiQ、PbQ和BiCuQO(Q = Se、Te)积累的 和 数据,将它们作为代表性例子。我们使用密度泛函理论(DFT)计算,在刚性带近似下为它们无缺陷的BiQ、PbQ和BiCuQO结构确定这种关系。我们发现,实验的 -vs-关系中的一般趋势能通过计算得到的 -vs-关系得到合理的解释,并且涵盖这些关系的载流子密度与位于距其能带边缘约0.5 eV范围内的态相关,这证实了它们热电性质的表层特性。尽管这些TE材料在结构上不是一维(1D)的,但它们大多在能带边缘附近具有尖锐的态密度峰,因为它们的能带色散具有隐藏的1D特征,所以它们的热功率通常在数值上较高。

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