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一种锚定在碳布上的混合氮化镓/氧化镓结构作为超级电容器的高性能电极。

A hybrid GaN/GaO structure anchored on carbon cloth as a high-performance electrode of supercapacitors.

作者信息

Hu Yan-Ling, Wang Zihan, Yuan Ronghuo, Xu Zhihan, Dai Yan, Wang Bing, Fu Yao, Ye Meidan, Yang Yun, Zou Zhimin, Jiang Chunhai

机构信息

Fujian Provincial Key Laboratory of Functional Materials and Applications, School of Materials Science and Engineering, Xiamen University of Technology, Xiamen, 361024, P.R. China.

Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Department of Physics, Xiamen University, Xiamen 361005, China.

出版信息

Dalton Trans. 2022 Nov 15;51(44):16945-16956. doi: 10.1039/d2dt02904a.

Abstract

A hybrid structure of GaN/GaO microrods was fabricated on carbon cloth (CC) using a hydrothermal process combined with a high-temperature nitridation followed by an air annealing process. By elevating the post-annealing temperature to 500 °C, both electron density () and specific capacitance () of the composite electrode were significantly enhanced. Symmetric SCs assembled with GaN/CC-500 showed great potential in both 1 M HSO aqueous solution and a PVA-HSO gel-like electrolyte. The aqueous symmetric GaN/CC-500 SC exhibited an excellent capacitance (1301.20 mF cm, 0.5 mA cm), high rate capability (75.23% of capacitance retention at 10 mA cm), outstanding cycling stability (77.27% of capacitance retention after 20 000 cycles, 10 mA cm), and large energy storage capability (27.53 μW h cm of energy density, 0.10 mW cm of power density). All-solid-state symmetric GaN/CC-500 SC also manifested a high capacitance (1183.35 mF cm, 0.5 mA cm) and good rate capability (53.98% capacitance retention, 10 mA cm). The high electrochemical performance of the GaN/CC-500 electrode is attributed to the GaN/GaO hybrid structure, with α-GaO providing absorption/redox active sites on the surface, and the heavily oxygen-doped GaN enabling fast electron transport. The microrods with the GaN/GaO hybrid structure as the active material for solid SCs can deliver an energy density of 0.58 W h kg (3.54 mW h cm) with a power density of 154 W kg (0.94 W cm). The mechanism identified in this work would be helpful in designing GaN-based energy storage devices with better performances in the future.

摘要

采用水热法结合高温氮化,随后进行空气退火处理,在碳布(CC)上制备了GaN/GaO微棒的混合结构。通过将退火后温度提高到500℃,复合电极的电子密度()和比电容()均显著提高。用GaN/CC - 500组装的对称超级电容器在1 M HSO水溶液和PVA - HSO凝胶状电解质中均显示出巨大潜力。水性对称GaN/CC - 500超级电容器表现出优异的电容(1301.20 mF cm,0.5 mA cm)、高倍率性能(在10 mA cm下电容保持率为75.23%)、出色的循环稳定性(在20000次循环后,10 mA cm下电容保持率为77.27%)以及大储能能力(能量密度为27.53 μW h cm,功率密度为0.10 mW cm)。全固态对称GaN/CC - 500超级电容器也表现出高电容(1183.35 mF cm,0.5 mA cm)和良好的倍率性能(在10 mA cm下电容保持率为53.98%)。GaN/CC - 500电极的高电化学性能归因于GaN/GaO混合结构,其中α - GaO在表面提供吸收/氧化还原活性位点,而重氧掺杂的GaN实现快速电子传输。具有GaN/GaO混合结构的微棒作为固态超级电容器的活性材料,可提供0.58 W h kg(3.54 mW h cm)的能量密度和154 W kg(0.94 W cm)的功率密度。这项工作中确定的机制将有助于未来设计性能更好的基于GaN的储能器件。

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