Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
Adv Sci (Weinh). 2022 Dec;9(35):e2204631. doi: 10.1002/advs.202204631. Epub 2022 Oct 26.
The low uniformity in properties of relaxor ferroelectric crystals is a long-standing issue in the ferroelectric community, which limits the available volume of the entire crystal boule. The aim of this study is to develop a relaxor ferroelectric crystal with improved property uniformity and excellent piezoelectricity. To this end, Pb(In Nb )O -Pb(Mg Nb )O -PbTiO is doped with Nd O (Nd-PIN-PMN-PT) to improve the crystal performance. Along the crystal boule, the piezoelectric coefficient d varies from 2800 to 3500 pC N , and the dielectric constant ranges from 8400 to 9800, with variations of 25% and 16%, respectively. Such high property uniformity results in over 75% available volume of the crystal boule, compared to 30-50% for undoped crystals grown by Bridgman method. At the electric field of 1 kV cm , the converse piezoelectric response is up to 4780 pm V . In addition, its Curie temperature (T ) and coercive field (E ) are above 150 °C and 3 kV cm , respectively. Compared with Pb(Mg Nb )O -PbTiO crystal (d : 1500 pC N , T : 135 °C, E : 2.3 kV cm ), the larger piezoelectricity, the higher T and E , and improved uniformity make Nd-PIN-PMN-PT crystals promising candidates for advanced piezoelectric applications.
弛豫铁电晶体性能的低均匀性是铁电领域长期存在的问题,这限制了整个晶体棒的可用体积。本研究旨在开发具有改善的性能均匀性和优异压电性能的弛豫铁电晶体。为此,在 Pb(In Nb )O-Pb(Mg Nb )O-PbTiO 中掺杂 Nd O(Nd-PIN-PMN-PT)来改善晶体性能。沿晶体棒,压电系数 d 从 2800 到 3500 pC N 变化,介电常数从 8400 到 9800 变化,分别变化 25%和 16%。如此高的性能均匀性导致晶体棒的可用体积超过 75%,而布里奇曼法生长的未掺杂晶体的可用体积为 30-50%。在 1 kV cm 的电场下,逆压电响应高达 4780 pm V。此外,其居里温度(T)和矫顽场(E)分别高于 150°C 和 3 kV cm。与 Pb(Mg Nb )O-PbTiO 晶体(d:1500 pC N,T:135°C,E:2.3 kV cm)相比,更大的压电性、更高的 T 和 E 以及改善的均匀性使 Nd-PIN-PMN-PT 晶体成为先进压电应用的有前途的候选材料。