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在具有大单晶畴的龙迹玻璃上高效沉积厘米级二硫化钼单层膜。

Highly Efficient Deposition of Centimeter-Scale MoS Monolayer Film on Dragontrail Glass with Large Single-Crystalline Domains.

作者信息

Yang Xu, Li Shisheng, Sakuma Yoshiki

机构信息

Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan.

International Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan.

出版信息

Small Methods. 2022 Dec;6(12):e2201079. doi: 10.1002/smtd.202201079. Epub 2022 Oct 26.

Abstract

Highly efficient growth of a centimeter-scale MoS monolayer film by oxide scale sublimation chemical vapor deposition (OSSCVD) in a time as short as 60 s is reported. Benefiting from the superior catalytic ability of Dragontrail glass (DT-glass) substrate and the controlled large vapor supersaturation of the molybdenum source, the ultrafast deposition of MoS is realized with maintaining large-sized single-crystalline domains over 20 µm at maximum in the film. It is comparable to those reported for MoS grown in tens of minutes and even hours. Similar to the face-to-face precursor feed route, the gas-controlled OSSCVD with a showerhead configuration facilitates a homogeneous and controllable source supply. It enables high-quality monolayer MoS film deposition on 2 × 2 cm DT-glass with centimeter-scale uniformity confirmed by microscopic, spectroscopic, and electrical characterizations. Back-gate MoS field-effect transistors fabricated on polycrystalline continuous film exhibit the maximum field-effect mobility of 5.1 cm V s and a peak I /I ratio of 5 × 10 . They reach 40 cm V s and 1.2 × 10 , respectively, on single-crystalline domains. These results are even greater than those for MoS grown using 1-2 orders of magnitude longer deposition time and higher temperatures. This study highlights the opportunities for low-cost high-throughput production of large-area high-quality monolayer MoS .

摘要

据报道,通过氧化层升华化学气相沉积(OSSCVD)在短短60秒内就能高效生长出厘米级的单层MoS薄膜。受益于Dragontrail玻璃(DT玻璃)衬底的卓越催化能力以及钼源可控的大蒸汽过饱和度,实现了MoS的超快沉积,同时在薄膜中保持最大尺寸超过20 µm的大尺寸单晶畴。这与报道的在数十分钟甚至数小时内生长的MoS相当。与面对面前驱体进料路线类似,带有喷头配置的气体控制OSSCVD有助于实现均匀且可控的源供应。它能够在2×2 cm的DT玻璃上沉积高质量的单层MoS薄膜,通过显微镜、光谱和电学表征证实了其厘米级的均匀性。在多晶连续薄膜上制备的背栅MoS场效应晶体管表现出最大场效应迁移率为5.1 cm² V⁻¹ s⁻¹,峰值Ion/Ioff比为5×10⁷。在单晶畴上,它们分别达到40 cm² V⁻¹ s⁻¹和1.2×10⁸。这些结果甚至比使用长1 - 2个数量级的沉积时间和更高温度生长的MoS还要好。这项研究突出了低成本高通量生产大面积高质量单层MoS的机会。

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