Gao Qingguo, Lu Jie, Chen Simin, Chen Lvcheng, Xu Zhequan, Lin Dexi, Xu Songyi, Liu Ping, Zhang Xueao, Cai Weiwei, Zhang Chongfu
School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, China.
College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
Nanomaterials (Basel). 2022 Aug 7;12(15):2719. doi: 10.3390/nano12152719.
Two-dimensional molybdenum disulfide (MoS) has attracted significant attention for next-generation electronics, flexible devices, and optical applications. Chemical vapor deposition is the most promising route for the production of large-scale, high-quality MoS films. Recently, the chemical vapor deposition of MoS films on soda-lime glass has attracted great attention due to its low cost, fast growth, and large domain size. Typically, a piece of Mo foil or graphite needs to be used as a buffer layer between the glass substrates and the CVD system to prevent the glass substrates from being fragmented. In this study, a novel method was developed for synthesizing MoS on glass substrates. Inert AlO was used as the buffer layer and high-quality, uniform, triangular monolayer MoS crystals with domain sizes larger than 400 μm were obtained. To demonstrate the advantages of glass/AlO substrates, a direct comparison of CVD MoS on glass/Mo and glass/AlO substrates was performed. When Mo foil was used as the buffer layer, serried small bilayer islands and bright core centers could be observed on the MoS domains at the center and edges of glass substrates. As a control, uniform MoS crystals were obtained when AlO was used as the buffer layer, both at the center and the edge of glass substrates. Raman and PL spectra were further characterized to show the merit of glass/AlO substrates. In addition, the thickness of MoS domains was confirmed by an atomic force microscope and the uniformity of MoS domains was verified by Raman mapping. This work provides a novel method for CVD MoS growth on soda-lime glass and is helpful in realizing commercial applications of MoS.
二维二硫化钼(MoS)在下一代电子器件、柔性设备及光学应用领域备受关注。化学气相沉积法是制备大规模、高质量MoS薄膜最具前景的途径。近来,在钠钙玻璃上化学气相沉积MoS薄膜因其成本低、生长速度快及畴尺寸大而备受瞩目。通常,需使用一片钼箔或石墨作为玻璃衬底与化学气相沉积系统之间的缓冲层,以防止玻璃衬底破碎。在本研究中,开发了一种在玻璃衬底上合成MoS的新方法。使用惰性AlO作为缓冲层,获得了畴尺寸大于400μm的高质量、均匀的三角形单层MoS晶体。为证明玻璃/AlO衬底的优势,对在玻璃/Mo和玻璃/AlO衬底上化学气相沉积的MoS进行了直接比较。当使用钼箔作为缓冲层时,在玻璃衬底中心和边缘的MoS畴上可观察到密集的小双层岛和明亮的核心中心。作为对照,当使用AlO作为缓冲层时,在玻璃衬底的中心和边缘均获得了均匀的MoS晶体。通过拉曼光谱和光致发光光谱进一步表征以展示玻璃/AlO衬底的优点。此外,用原子力显微镜确认了MoS畴的厚度,并用拉曼映射验证了MoS畴的均匀性。这项工作为在钠钙玻璃上化学气相沉积生长MoS提供了一种新方法,有助于实现MoS的商业应用。