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通过扩展A-D-A型非富勒烯受体的稠环供体单元降低有机太阳能电池中的陷阱密度,实现超过17%的效率。

Reducing Trap Density in Organic Solar Cells via Extending the Fused Ring Donor Unit of an A-D-A-Type Nonfullerene Acceptor for Over 17% Efficiency.

作者信息

Zhou Jixiang, He Dan, Li Yawen, Huang Fei, Zhang Jianqi, Zhang Cheng, Yuan Yongbo, Lin Yuze, Wang Chunru, Zhao Fuwen

机构信息

State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, P. R. China.

College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, P. R. China.

出版信息

Adv Mater. 2023 Jan;35(3):e2207336. doi: 10.1002/adma.202207336. Epub 2022 Dec 11.

Abstract

The high trap density (generally 10 to 10  cm ) in thin films of organic semiconductors is the primary reason for the inferior charge-carrier mobility and large nonradiative recombination energy loss (ΔE ) in organic solar cells (OSCs), limiting improvement in power conversion efficiencies (PCEs). In this study, the trap density in OSCs is efficiently reduced via extending the donor core of nonfullerene acceptors (NFAs) from a heptacyclic unit to a nonacyclic unit. TTPIC-4F with a nonacyclic unit has stronger intramolecular and intermolecular interactions, affording higher crystallinity in thin films relative to its counterpart BTPIC-4F. Thus, the D18:TTPIC-4F-based device achieves a lower trap density of 4.02 × 10  cm , comparable to some typical high-performance inorganic/hybrid semiconductors, with higher mobility and inhibited charge-carrier recombination in devices. Therefore, the D18:TTPIC-4F-based OSC exhibits an impressive PCE of 17.1% with a low ΔE of 0.208 eV, which is the best known value for A-D-A-type NFAs. Therefore, extending the donor core of NFAs is an efficient method for suppressing trap states in OSCs for high PCEs.

摘要

有机半导体薄膜中的高陷阱密度(通常为10至10 cm )是有机太阳能电池(OSC)中电荷载流子迁移率较低和非辐射复合能量损失较大(ΔE )的主要原因,限制了功率转换效率(PCE)的提高。在本研究中,通过将非富勒烯受体(NFA)的供体核从七环单元扩展到九环单元,有效地降低了OSC中的陷阱密度。具有九环单元的TTPIC-4F具有更强的分子内和分子间相互作用,相对于其对应物BTPIC-4F,在薄膜中具有更高的结晶度。因此,基于D18:TTPIC-4F的器件实现了4.02×10 cm 的较低陷阱密度,与一些典型的高性能无机/混合半导体相当,器件中的迁移率更高且电荷载流子复合受到抑制。因此,基于D18:TTPIC-4F的OSC表现出令人印象深刻的17.1%的PCE,ΔE 低至0.208 eV,这是A-D-A型NFA的已知最佳值。因此,扩展NFA的供体核是抑制OSC中陷阱态以实现高PCE的有效方法。

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