Liu Xiao, Liu Jinxin, Fang Mengke, Wei Yuehua, Su Yue, Chen Yangbo, Peng Gang, Cai Weiwei, Luo Wei, Deng Chuyun, Zhang Xueao
College of Physical Science and Technology, Xiamen University, Xiamen361005, China.
College of Science, National University of Defense Technology, Changsha410073, China.
ACS Appl Mater Interfaces. 2022 Nov 16;14(45):51122-51129. doi: 10.1021/acsami.2c15252. Epub 2022 Nov 4.
Investigating the energy dissipation in micro- and nanoscale is fundamental to improve the performance and reliability of two-dimensional (2D) electronics. Recently, 2D platinum selenide (PtSe) has drawn extensive attention in developing next-generation functional devices due to its distinctive fusion of versatile properties. Toward practical applications of PtSe devices, it is essential to understand the interfacial thermal properties between PtSe and its substrate. Among them, the thermal boundary conductance (TBC) has played a critical role for out-of-plane heat dissipation of PtSe devices. Here, we identify the energy dissipation behavior of multilayer PtSe devices and extract the actual TBC value of the PtSe/SiO interface by Raman thermometry with electrical bias. The obtained TBC value is about 8.6 MW m K, and it belongs to the low end of as-known solid-solid interfaces, suggesting possible applications regarding thermoelectric devices or others reliant on a large temperature gradient. Furthermore, the maximum current density of the PtSe device determines its threshold power, which is crucial for improving device design and guiding future applications. Therefore, we explore the electrical breakdown profile of the multilayer PtSe device, revealing the breakdown current density of 17.7 MA cm and threshold power density of 0.2 MW cm, which are larger than typical values for commonly used aluminum and copper. These results provide key insights into the energy dissipation of PtSe devices and make PtSe an excellent candidate for thermal confinement applications and nanometer-thin interconnects, which will benefit the development of energy-efficient functional 2D devices.
研究微纳尺度下的能量耗散对于提高二维（2D）电子器件的性能和可靠性至关重要。最近，二维硒化铂（PtSe）因其多种特性的独特融合，在开发下一代功能器件方面受到了广泛关注。对于PtSe器件的实际应用而言，了解PtSe与其衬底之间的界面热性质至关重要。其中，热边界电导（TBC）在PtSe器件的面外热耗散中起着关键作用。在此，我们通过施加电偏压的拉曼热测量法确定了多层PtSe器件的能量耗散行为，并提取了PtSe/SiO界面的实际TBC值。所获得的TBC值约为8.6 MW m² K⁻²，属于已知固-固界面的低端，这表明其在热电器件或其他依赖大温度梯度的器件方面可能具有应用前景。此外，PtSe器件的最大电流密度决定了其阈值功率，这对于改进器件设计和指导未来应用至关重要。因此，我们探索了多层PtSe器件的电击穿特性，揭示了其击穿电流密度为17.7 MA cm⁻²，阈值功率密度为0.2 MW cm⁻²，这高于常用铝和铜的典型值。这些结果为PtSe器件的能量耗散提供了关键见解，并使PtSe成为热限制应用和纳米级薄互连的优秀候选材料，这将有利于节能型功能二维器件的发展。
