Chen Longlong, Huang Jing, Yi Qian, Liu Dongyang, He Yuan, Li Ning, Feng Yi, Miao Lili, Zhao Chujun
Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University Changsha 410082 China
RSC Adv. 2022 Oct 24;12(47):30287-30294. doi: 10.1039/d2ra05437j.
Vanadium dioxide (VO), a correlated oxide compound, is one of the functional materials extensively studied in solid state physics due to its attractive physical properties. However, the nonlinear optical response of VO and related all-optical applications have been paid less attention. Here, the nonlinear refractive index ( ) and third-order nonlinear susceptibility ( ) of VO dispersions have been acquired to be 3.06 × 10 cm W and 1.68 × 10 esu at a wavelength of 671 nm, and 5.17 × 10 cm W and 2.83 × 10 esu at a wavelength of 532 nm the spatial self-phase modulation (SSPM) and spatial cross-phase modulation (SXPM) effects in the visible regime, respectively. Based on the excellent nonlinear optical properties of VO dispersions, the proof-of-principle functions such as optical logic or-gates, all-optical switches, and inter-channel information transfer are implemented in the visible wavelength. The experimental results on the response time of VO to light indicate that the formation of diffraction rings is mainly an electronically coherent third-order nonlinear optical process. The experimental results show that the VO dispersions exhibit an excellent nonlinear optical response and may lay the foundation for the application of VO-based all-optical devices.
二氧化钒(VO)是一种关联氧化物化合物,由于其具有吸引人的物理特性,是固态物理学中广泛研究的功能材料之一。然而,VO的非线性光学响应及相关全光应用受到的关注较少。在此,已测得VO分散体在波长671nm处的非线性折射率( )和三阶非线性极化率( )分别为3.06×10 cm²/W和1.68×10 esu,在波长532nm处分别为5.17×10 cm²/W和2.83×10 esu,这分别对应于可见波段的空间自相位调制(SSPM)和空间交叉相位调制(SXPM)效应。基于VO分散体优异的非线性光学特性,在可见波长下实现了诸如光逻辑或门、全光开关和通道间信息传输等原理验证功能。关于VO对光的响应时间的实验结果表明,衍射环的形成主要是一个电子相干的三阶非线性光学过程。实验结果表明,VO分散体表现出优异的非线性光学响应,可能为基于VO的全光器件的应用奠定基础。