Lin Fei, Xu Ruoyu, Zhou Mingyu, Young Robert J, Kinloch Ian A, Ding Yi
Department of Materials, National Graphene Institute, University of Manchester, Manchester M13 9PL, UK.
Department of Materials, Henry Royce Institute, University of Manchester, Manchester M13 9PL, UK.
Materials (Basel). 2022 Nov 3;15(21):7736. doi: 10.3390/ma15217736.
Copper-tungsten (Cu-W) composites are widely used in high-power and -temperature electrical applications. The combination of these metals, however, leads to compromised physical and electrical properties. Herein, we produce Cu-W-graphene oxide (Cu-W-GO) composites to address this challenge. To ensure uniform density composites, the as-received metal powders were flattened into a flake morphology by ball milling and then mixed with up to 0.5 wt.% GO flakes. The green forms were processed using spark plasma sintering. The GO was found to be well-dispersed amongst the metallic phases in the final composite. The addition of GO reduced the relative density of the composites slightly (4.7% decrease in relative density at 0.5 wt% GO loading for the composites processed at 1000 °C). X-ray diffraction confirmed good phase purity and that no carbide phases were produced. GO was found to improve the mechanical properties of the Cu-W, with an optimal loading of 0.1 wt.% GO found for ultimate compression strength and strain to failure, and 0.3 wt.% optimal loading for the 0.2% offset yield strength. Significantly, the electrical conductivity increased by up to 25% with the addition of 0.1 wt.% GO but decreased with higher GO loadings.
铜钨（Cu-W）复合材料广泛应用于高功率和高温电气应用中。然而，这些金属的组合会导致物理和电气性能受损。在此，我们制备了铜钨-氧化石墨烯（Cu-W-GO）复合材料来应对这一挑战。为确保复合材料密度均匀，将收到的金属粉末通过球磨加工成薄片形态，然后与高达0.5 wt.%的氧化石墨烯薄片混合。坯体采用放电等离子烧结工艺进行加工。结果发现，氧化石墨烯在最终复合材料的金属相中分散良好。氧化石墨烯的添加使复合材料的相对密度略有降低（在1000℃下加工的复合材料，当氧化石墨烯含量为0.5 wt%时，相对密度降低4.7%）。X射线衍射证实了良好的相纯度，且未产生碳化物相。研究发现，氧化石墨烯改善了铜钨的力学性能，对于极限抗压强度和断裂应变，最佳添加量为0.1 wt.%的氧化石墨烯；对于0.2% 屈服强度，最佳添加量为0.3 wt.%。值得注意的是，添加0.1 wt.%的氧化石墨烯可使电导率提高高达25%，但随着氧化石墨烯含量的增加电导率会降低。
