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整数量子霍尔 regime 中高迁移率石墨烯的多重分形电导涨落

Multifractal Conductance Fluctuations in High-Mobility Graphene in the Integer Quantum Hall Regime.

作者信息

Amin Kazi Rafsanjani, Nagarajan Ramya, Pandit Rahul, Bid Aveek

机构信息

Department of Physics, Indian Institute of Science, Bangalore, Karnataka 560012, India.

出版信息

Phys Rev Lett. 2022 Oct 28;129(18):186802. doi: 10.1103/PhysRevLett.129.186802.

DOI:10.1103/PhysRevLett.129.186802
PMID:36374690
Abstract

We present the first experimental evidence for the multifractality of a transport property at a topological phase transition. In particular, we show that conductance fluctuations display multifractality at the integer quantum Hall plateau-to-plateau transitions in high-mobility mesoscopic graphene devices. The multifractality gets rapidly suppressed as the chemical potential moves away from these critical points. Our combination of experimental study and multifractal analysis provides a novel method for probing the criticality of wave functions at phase transitions in mesoscopic systems, and quantum criticality in several condensed-matter systems.

摘要

我们给出了拓扑相变处输运性质多重分形的首个实验证据。具体而言,我们表明在高迁移率介观石墨烯器件的整数量子霍尔平台间跃迁中,电导涨落呈现出多重分形。随着化学势远离这些临界点,多重分形迅速受到抑制。我们的实验研究与多重分形分析相结合,为探测介观系统相变处波函数的临界性以及若干凝聚态系统中的量子临界性提供了一种新方法。

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