Olsthoorn SM, Wei HP, Pruisken AM
Van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands.
Phys Rev Lett. 2000 Feb 14;84(7):1567-70. doi: 10.1103/PhysRevLett.84.1567.
We report quantum Hall experiments on the plateau-insulator transition in a low mobility In(0.53)Ga(0.47)As/InP heterostructure. The data for the longitudinal resistance rho(xx) follow an exponential law and we extract a critical exponent kappa = 0.55+/-0. 05 which is slightly different from the established value kappa = 0. 42+/-0.04 for the plateau transitions. Upon correction for inhomogeneity effects, which cause the critical conductance sigma(*)(xx) to depend marginally on temperature, our data indicate that the plateau-plateau and plateau-insulator transitions are in the same universality class.
