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二维半导体中的高位谷极化三重态激子

High-lying valley-polarized trions in 2D semiconductors.

作者信息

Lin Kai-Qiang, Ziegler Jonas D, Semina Marina A, Mamedov Javid V, Watanabe Kenji, Taniguchi Takashi, Bange Sebastian, Chernikov Alexey, Glazov Mikhail M, Lupton John M

机构信息

Department of Physics, University of Regensburg, 93053, Regensburg, Germany.

Dresden Integrated Center for Applied Physics and Photonic Materials and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062, Dresden, Germany.

出版信息

Nat Commun. 2022 Nov 15;13(1):6980. doi: 10.1038/s41467-022-33939-w.

DOI:10.1038/s41467-022-33939-w
PMID:36379952
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9666447/
Abstract

Optoelectronic functionalities of monolayer transition-metal dichalcogenide (TMDC) semiconductors are characterized by the emergence of externally tunable, correlated many-body complexes arising from strong Coulomb interactions. However, the vast majority of such states susceptible to manipulation has been limited to the region in energy around the fundamental bandgap. We report the observation of tightly bound, valley-polarized, UV-emissive trions in monolayer TMDC transistors: quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an additional charge from a band-edge state. These high-lying trions have markedly different optical selection rules compared to band-edge trions and show helicity opposite to that of the excitation. An electrical gate controls both the oscillator strength and the detuning of the excitonic transitions, and therefore the Rabi frequency of the strongly driven three-level system, enabling excitonic quantum interference to be switched on and off in a deterministic fashion.

摘要

单层过渡金属二硫属化物(TMDC)半导体的光电功能特征在于,由强库仑相互作用产生的外部可调谐、相关多体复合物的出现。然而,绝大多数易于操控的此类状态仅限于基本带隙附近的能量区域。我们报告了在单层TMDC晶体管中观察到紧密束缚、谷极化、紫外发射的三重子:由具有负有效质量的高能导带中的一个电子、第一价带中的一个空穴以及带边态中的一个额外电荷组成的准粒子。与带边三重子相比,这些高能三重子具有明显不同的光学选择规则,并且显示出与激发相反的螺旋性。电栅极控制激子跃迁的振子强度和失谐,从而控制强驱动三能级系统的拉比频率,使得激子量子干涉能够以确定性方式开启和关闭。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7548/9666447/67fc9d29f06f/41467_2022_33939_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7548/9666447/a48cbaedc86b/41467_2022_33939_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7548/9666447/5f4a2c996dfd/41467_2022_33939_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7548/9666447/88c1511ce6cc/41467_2022_33939_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7548/9666447/67fc9d29f06f/41467_2022_33939_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7548/9666447/a48cbaedc86b/41467_2022_33939_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7548/9666447/5f4a2c996dfd/41467_2022_33939_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7548/9666447/88c1511ce6cc/41467_2022_33939_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7548/9666447/67fc9d29f06f/41467_2022_33939_Fig4_HTML.jpg

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Narrow-band high-lying excitons with negative-mass electrons in monolayer WSe.具有负质量电子的单层WSe中的窄带高位激子。
Nat Commun. 2021 Sep 17;12(1):5500. doi: 10.1038/s41467-021-25499-2.
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Spin/valley pumping of resident electrons in WSe and WS monolayers.WSe和WS单层中驻留电子的自旋/谷抽运
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Light Sci Appl. 2023 Dec 7;12(1):295. doi: 10.1038/s41377-023-01338-5.
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Ultraviolet interlayer excitons in bilayer WSe.双层WSe₂中的紫外层间激子
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