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用于调节光催化性能的石墨烯量子点中硫化诱导的非辐射电子-空穴复合动力学

Sulfication-induced non-radiative electron-hole recombination dynamics in graphene quantum dots for tuning photocatalytic performance.

作者信息

Cui Peng, Xue Yuan

机构信息

School of New Materials and Shoes & Clothing Engineering, Liming Vocational University, Quanzhou 362000, Fujian Province, PR China; Nanotechnology Research Laboratory, Jiangnan University, Wuxi 214122, Jiangsu Province, PR China.

Nanotechnology Research Laboratory, Jiangnan University, Wuxi 214122, Jiangsu Province, PR China.

出版信息

Spectrochim Acta A Mol Biomol Spectrosc. 2023 Feb 15;287(Pt 1):122117. doi: 10.1016/j.saa.2022.122117. Epub 2022 Nov 15.

DOI:10.1016/j.saa.2022.122117
PMID:36403541
Abstract

GQDs, or graphene quantum dots, are promising materials for energy-related applications. Their optoelectronic properties can be modified by adding heteroatoms, making them good candidates for photocatalysts. However, the structure-property relationship of these materials still needs to be investigated to control their properties better. In particular, photocatalysis of GQDs is hindered by non-radiative electron-hole recombination. In this study, density functional theory (DFT) calculations were performed to investigate the electronic structures and optical properties of GQDs doped with three distinct sulfur functional groups, i.e., sulfur oxide (OHS), sulfhydryl (SH), and thiophene (CHS), respectively. The results suggest that sulfur doping decreases the GQD bandgap. In particular, the asymmetric capping of the GQD edges with the CHS groups led to additional peaks at low excitation energies, whereas for GQDs functionalized with OHS or SH groups, only a shift in the main absorption peak or a change in the absorption intensity was observed. SH functionalization drastically increased electronic coupling, while CHS functionalization induced more charge-relaxation channels in the GQDs. Thus, the results shed light on the mechanisms governing the photocatalytic efficiency of GQDs.

摘要

石墨烯量子点(GQDs)是用于能源相关应用的有前景的材料。通过添加杂原子可以改变它们的光电性质,使其成为光催化剂的良好候选材料。然而,仍需研究这些材料的结构 - 性能关系以更好地控制其性质。特别是,GQDs的光催化受到非辐射电子 - 空穴复合的阻碍。在本研究中,进行了密度泛函理论(DFT)计算,以分别研究掺杂三种不同硫官能团,即氧化硫(OHS)、巯基(SH)和噻吩(CHS)的GQDs的电子结构和光学性质。结果表明,硫掺杂降低了GQD的带隙。特别是,用CHS基团对GQD边缘进行不对称封端导致在低激发能下出现额外的峰,而对于用OHS或SH基团功能化的GQDs,仅观察到主吸收峰的位移或吸收强度的变化。SH功能化极大地增加了电子耦合,而CHS功能化在GQDs中诱导了更多的电荷弛豫通道。因此,这些结果揭示了控制GQDs光催化效率的机制。

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