Arata Yuta, Nishinaka Hiroyuki, Takeda Minoru, Kanegae Kazutaka, Yoshimoto Masahiro
Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto606-8585, Japan.
Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto606-8585, Japan.
ACS Omega. 2022 Nov 1;7(45):41768-41774. doi: 10.1021/acsomega.2c06062. eCollection 2022 Nov 15.
The resistive switching temperature associated with the metal-insulator transition (MIT) of epitaxial VO thin films grown on flexible synthetic mica was modulated by bending stress. The resistive switching temperature of polycrystalline VO and VO thin films, initially grown on synthetic mica without a buffer layer, was observed not to shift with bending stress. By inserting a SnO buffer layer, epitaxial growth of the VO (010) thin film was achieved, and the MIT temperature was found to vary with the bending stress. Thus, it was revealed that the bending response of the VO thin film depends on the presence or absence of the SnO buffer layer. The bending stress applied a maximum in-plane tensile strain of 0.077%, resulting in a high-temperature shift of 2.3 °C during heating and 1.8 °C during cooling. After 10 bending cycles at a radius of curvature = 10 mm, it was demonstrated that the epitaxial VO thin film exhibits resistive switching temperature associated with MIT.
在柔性合成云母上生长的外延VO薄膜与金属-绝缘体转变（MIT）相关的电阻开关温度通过弯曲应力进行调制。最初在没有缓冲层的合成云母上生长的多晶VO和VO薄膜的电阻开关温度，观察到不会随弯曲应力而变化。通过插入SnO缓冲层，实现了VO（010）薄膜的外延生长，并且发现MIT温度随弯曲应力而变化。因此，揭示了VO薄膜的弯曲响应取决于SnO缓冲层的存在与否。施加的弯曲应力产生了最大面内拉伸应变0.077%，导致加热期间高温偏移2.3°C，冷却期间高温偏移1.8°C。在曲率半径 = 10 mm下进行10次弯曲循环后，证明外延VO薄膜表现出与MIT相关的电阻开关温度。
