Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University , Gwangju 61186, Republic of Korea.
Department of Materials Science and Engineering, Pohang University of Science and Technology , Pohang 37673, Republic of Korea.
ACS Appl Mater Interfaces. 2017 Jul 19;9(28):23909-23917. doi: 10.1021/acsami.7b03398. Epub 2017 Jun 13.
Atomic layer deposition was adopted to deposit VO thin films using vanadyl tri-isopropoxide {VO[O(CH)], VTIP} and water (HO) at 135 °C. The self-limiting and purge-time-dependent growth behaviors were studied by ex situ ellipsometry to determine the saturated growth conditions for atomic-layer-deposited VO. The as-deposited films were found to be amorphous. The structural, chemical, and optical properties of the crystalline thin films with controlled phase formation were investigated after postdeposition annealing at various atmospheres and temperatures. Reducing and oxidizing atmospheres enabled the formation of pure VO and VO phases, respectively. The possible band structures of the crystalline VO and VO thin films were established. Furthermore, an electrochemical response and a voltage-induced insulator-to-metal transition in the vertical metal-vanadium oxide-metal device structure were observed for VO and VO films, respectively.
采用原子层沉积法，以正丙氧基氧钒（VO[O(CH)]，VTIP）和水（HO）为原料，于 135°C 下沉积 VO 薄膜。通过原位椭圆偏振法研究了自限制和吹扫时间依赖性生长行为，以确定原子层沉积 VO 的饱和生长条件。沉积得到的薄膜为非晶态。通过在不同气氛和温度下进行后沉积退火，研究了具有可控相形成的结晶薄膜的结构、化学和光学性质。还原和氧化气氛分别能够形成纯 VO 和 VO 相。此外，还观察到了 VO 和 VO 薄膜在垂直金属-钒氧化物-金属器件结构中的电化学响应和电压诱导的绝缘-金属转变。
