Fabrication of two Se/CsPbBr heterojunctions structures for self-powered UV-visible photodetectors.

It has been a universal route for enhanced photoelectric performance in photodetectors by constructing a heterojunction that is conductive for suppressing recombination of photogenerated carriers and promoting collection efficiency, and probably producing self-powered capability. However, the dependence of the built-in electric field distributions created by the heterojunction on photodetector performance has rarely been investigated. Herein, two kinds of self-powered UV-visible photodetectors with different device architectures based on single Se wire and CsPbBr particles are facilely fabricated and compared. It is found that both the two photodetectors show excellent self-powered operating properties, fast response and binary response. However, due to the different distributions of built-in electric field caused by device architectures, it yields a significant photovoltaic voltage distinction and different responsivity and detectivity spectra for the Se/CsPbBr photodetectors. These results are conductive to guide the design of self-powered heterojunction photodetectors by regulating the built-in electric field distributions.