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用于高性能自供电光电探测器的毫米级单晶CsPbrB/CuI异质结

Millimeter-Sized Single-Crystal CsPbrB/CuI Heterojunction for High-Performance Self-Powered Photodetector.

作者信息

Zhang Yong, Li Siyuan, Yang Wei, Joshi Mahesh Kumar, Fang Xiaosheng

机构信息

Department of Materials Science , Fudan University , Shanghai , 200433 , P.R. China.

出版信息

J Phys Chem Lett. 2019 May 16;10(10):2400-2407. doi: 10.1021/acs.jpclett.9b00960. Epub 2019 Apr 30.

Abstract

Millimeter-sized CsPbBr single crystals were prepared via a facile solvent-evaporation method in ambient environment. The heterojunction between p-type CuI and n-type CsPbBr was formed by a simple immersion process. The as-integrated CsPbBr/CuI device exhibits a good rectifying behavior (ratio of 250 at ±2 V). In particular, the photodetector shows excellent self-powered characteristics under 540 nm light illumination, including high photocurrent (near 100 nA); high photosensitivity (on/off ratio of 1.5 × 10); fast response speed (0.04/2.96 ms); and good wavelength selectivity (565-525 nm), responsivity (1.4 mA W), and detectivity (6.2 × 10 Jones). This work provides a simple, low-cost, and effective method for preparing millimeter-level CsPbBr single crystals. The simple device architecture further provides a promising approach for fabricating high-performance self-powered photodetectors.

摘要

通过简便的溶剂蒸发法在环境条件下制备了毫米尺寸的CsPbBr单晶。通过简单的浸泡工艺形成了p型CuI与n型CsPbBr之间的异质结。集成后的CsPbBr/CuI器件表现出良好的整流行为(在±2 V时比率为250)。特别地,该光电探测器在540 nm光照下表现出优异的自供电特性,包括高光电流(接近100 nA);高灵敏度(开/关比为1.5×10);快速响应速度(0.04/2.96 ms);以及良好的波长选择性(565 - 525 nm)、响应度(1.4 mA W)和探测率(6.2×10琼斯)。这项工作为制备毫米级CsPbBr单晶提供了一种简单、低成本且有效的方法。这种简单的器件结构进一步为制造高性能自供电光电探测器提供了一种有前景的方法。

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