Multiwavelength High-Detectivity MoS Photodetectors with Schottky Contacts.

Photodetection is one of the vital functions for the multifunctional "More than Moore" (MtM) microchips urgently required by Internet of Things (IoT) and artificial intelligence (AI) applications. The further improvement of the performance of photodetectors faces various challenges, including materials, fabrication processes, and device structures. We demonstrate in this work MoS photodetectors with a nanoscale channel length and a back-gate device structure. With the mechanically exfoliated six-monolayer-thick MoS, a Schottky contact between source/drain electrodes and MoS, a high responsivity of 4.1 × 10 A W, and a detectivity of 1.34 × 10 cm Hz W at 650 nm were achieved. The devices are also sensitive to multiwavelength lights, including 520 and 405 nm. The electrical and optoelectronic properties of the MoS photodetectors were studied in depth, and the working mechanism of the devices was analyzed. The photoinduced Schottky barrier lowering (PIBL) was found to be important for the high performance of the phototransistor.