College of Optics and Electronic Science and Technology, China Jiliang University, Hangzhou, 310018, P. R. China.
State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
Phys Chem Chem Phys. 2023 Jan 4;25(2):1248-1256. doi: 10.1039/d2cp04630j.
Antimonide-based ternary III-V nanowires (NWs) provide a tunable bandgap over a wide range, and the GaAsSb material system has prospective applications in the 1.3-1.55 μm spectral range of optical communications. In this paper, GaAs/Ga(As)Sb/GaAs single quantum well (SQW) NWs were grown on Si(111) substrates by molecular beam epitaxy (MBE). In addition, the morphologies and tunable wavelengths of the GaAs/Ga(As)Sb/GaAs SQWs were adjusted by interrupting the Ga droplets and changing the growth temperatures and V/III ratios. The four morphologies of the GaAs/Ga(As)Sb/GaAs SQW NWs were observed by scanning electron microscopy (SEM). The microscale lattice structure related to the incorporation of Sb in GaAs/Ga(As)Sb/GaAs SQWs was studied by Raman spectroscopy. The crystal quality of the GaAs/Ga(As)Sb/GaAs SQW NWs was researched by X-ray diffraction (XRD) and transmission electron microscopy (TEM). In addition, the optical properties of the GaAs/Ga(As)Sb/GaAs SQWs were investigated by photoluminescence (PL) spectroscopy. The PL spectra showed the peak emission wavelength range of ∼818 nm (GaAs) to ∼1628 nm (GaSb) at 10 K. This study provides an approach to enhance the effective control of the morphology, structure and wavelength of quantum well or core-shell NWs.
基于锑化物的三元 III-V 纳米线 (NWs) 在很宽的范围内提供可调带隙，而 GaAsSb 材料体系在光学通信的 1.3-1.55μm 光谱范围内具有潜在的应用。本文采用分子束外延 (MBE) 在 Si(111)衬底上生长 GaAs/Ga(As)Sb/GaAs 单量子阱 (SQW) NWs。此外，通过中断 Ga 液滴和改变生长温度和 V/III 比，可以调整 GaAs/Ga(As)Sb/GaAs SQW 的形貌和可调谐波长。通过扫描电子显微镜 (SEM) 观察到 GaAs/Ga(As)Sb/GaAs SQW NW 的四种形貌。通过拉曼光谱研究了与 GaAs/Ga(As)Sb/GaAs SQW 中 Sb 掺入相关的微尺度晶格结构。通过 X 射线衍射 (XRD) 和透射电子显微镜 (TEM) 研究了 GaAs/Ga(As)Sb/GaAs SQW NW 的晶体质量。此外，通过光致发光 (PL) 光谱研究了 GaAs/Ga(As)Sb/GaAs SQW 的光学性质。PL 光谱在 10 K 时显示出约 818nm (GaAs)到约 1628nm (GaSb)的峰值发射波长范围。这项研究为增强对量子阱或核壳 NWs 的形貌、结构和波长的有效控制提供了一种方法。
