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具有回音壁模式的低阈值ZnO微棒激光器中受激发射的激子机制

Excitonic Mechanisms of Stimulated Emission in Low-Threshold ZnO Microrod Lasers with Whispering Gallery Modes.

作者信息

Tarasov Andrey P, Muslimov Arsen E, Kanevsky Vladimir M

机构信息

Shubnikov Institute of Crystallography, Federal Scientific Research Centre "Crystallography and Photonics" of Russian Academy of Sciences, 119333 Moscow, Russia.

出版信息

Materials (Basel). 2022 Dec 7;15(24):8723. doi: 10.3390/ma15248723.

DOI:10.3390/ma15248723
PMID:36556534
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9786118/
Abstract

Whispering gallery mode (WGM) ZnO microlasers gain attention due to their high -factors and ability to provide low-threshold near-UV lasing. However, a detailed understanding of the optical gain mechanisms in such structures has not yet been achieved. In this work, we study the mechanisms of stimulated emission (SE) in hexagonal ZnO microrods, demonstrating high-performance WGM lasing with thresholds down to 10-20 kW/cm and -factors up to ~3500. The observed SE with a maximum in the range of 3.11-3.17 eV at room temperature exhibits a characteristic redshift upon increasing photoexcitation intensity, which is often attributed to direct recombination in the inverted electron-hole plasma (EHP). We show that the main contribution to room-temperature SE in the microrods studied, at least for near-threshold excitation intensities, is made by inelastic exciton-electron scattering rather than EHP. The shape and perfection of crystals play an important role in the excitation of this emission. At lower temperatures, two competing gain mechanisms take place: exciton-electron scattering and two-phonon assisted exciton recombination. The latter forms emission with a maximum in the region near ~3.17 eV at room temperature without a significant spectral shift, which was observed only from weakly faceted ZnO microcrystals in this study.

摘要

回音壁模式(WGM)氧化锌微激光器因其高因子以及能够实现低阈值近紫外激光发射而受到关注。然而,目前尚未对这类结构中的光学增益机制有详细的了解。在这项工作中,我们研究了六方氧化锌微棒中的受激发射(SE)机制,展示了阈值低至10 - 20 kW/cm且因子高达约3500的高性能WGM激光发射。在室温下观察到的SE在3.11 - 3.17 eV范围内有一个最大值,随着光激发强度的增加呈现出特征性的红移,这通常归因于在反转的电子 - 空穴等离子体(EHP)中的直接复合。我们表明,在所研究的微棒中,室温下SE的主要贡献,至少对于近阈值激发强度而言,是由非弹性激子 - 电子散射而非EHP产生的。晶体的形状和完整性在这种发射的激发中起着重要作用。在较低温度下,会出现两种相互竞争的增益机制:激子 - 电子散射和双声子辅助激子复合。后者在室温下形成最大值位于约3.17 eV附近区域的发射,且没有明显的光谱位移,在本研究中仅从弱刻面的氧化锌微晶中观察到这种情况。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/7aad0567176d/materials-15-08723-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/0e616d09c1b4/materials-15-08723-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/d45e40343b38/materials-15-08723-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/c2225fcf4c75/materials-15-08723-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/0a2bec5289c8/materials-15-08723-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/0ea99f8604d3/materials-15-08723-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/8d570a92c9e3/materials-15-08723-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/7aad0567176d/materials-15-08723-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/0e616d09c1b4/materials-15-08723-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/d45e40343b38/materials-15-08723-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/c2225fcf4c75/materials-15-08723-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/0a2bec5289c8/materials-15-08723-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/0ea99f8604d3/materials-15-08723-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/8d570a92c9e3/materials-15-08723-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cb5a/9786118/7aad0567176d/materials-15-08723-g007.jpg

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