Yao Xiaogang, Kong Zhen, Liu Shengfu, Wang Yong, Shao Yongliang, Wu Yongzhong, Hao Xiaopeng
State Key Lab of Crystal Materials, Shandong University, Jinan 250100, China.
Department of Materials Science and Engineering, Qilu University of Technology, Jinan 250353, China.
Materials (Basel). 2022 Dec 9;15(24):8791. doi: 10.3390/ma15248791.
The ultra-wide bandgap semiconductor AlN has attracted a great deal of attention owing to its wide application potential in the field of electronics and optoelectronic devices. In this report, based on the mechanism of the physical vapor transport (PVT) growth of AlN crystal, the c- and m-plane AlN seed crystals were prepared simultaneously through special temperature field design. It is proved that AlN crystals with different orientations can be obtained at the same temperature field. The structure parameter of AlN crystal was obtained through the characteristic evaluations. In detail, XPS was used to analyze the chemical states and bonding states of the surface of seed crystals. The content of oxygen varied along with distinct orientations. Raman spectrum documented a small level of compressive stress on these crystal seeds. Tested results confirmed that the prepared AlN crystal seeds had high quality.
超宽带隙半导体AlN因其在电子和光电器件领域的广泛应用潜力而备受关注。在本报告中，基于AlN晶体物理气相传输（PVT）生长的机理，通过特殊的温度场设计同时制备了c面和m面AlN籽晶。结果表明，在同一温度场下可以获得不同取向的AlN晶体。通过特性评估得到了AlN晶体的结构参数。具体而言，利用XPS分析了籽晶表面的化学状态和键合状态。氧含量随不同取向而变化。拉曼光谱记录了这些晶体籽晶上存在少量的压应力。测试结果证实所制备的AlN晶体籽晶具有高质量。
