Wang Qing, Zhou Rongfei, Tsuru Toshinori
School of Energy, Materials and Chemical Engineering, Hefei University, Hefei 230601, China.
State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 210009, China.
Membranes (Basel). 2022 Dec 12;12(12):1255. doi: 10.3390/membranes12121255.
The scale of research for developing and applying silicon carbide (SiC) membranes for gas separation has rapidly expanded over the last few decades. Given its importance, this review summarizes the progress on SiC membranes for gas separation by focusing on SiC membrane preparation approaches and their application. The precursor-derived ceramic approaches for preparing SiC membranes include chemical vapor deposition (CVD)/chemical vapor infiltration (CVI) deposition and pyrolysis of polymeric precursor. Generally, SiC membranes formed using the CVD/CVI deposition route have dense structures, making such membranes suitable for small-molecule gas separation. On the contrary, pyrolysis of a polymeric precursor is the most common and promising route for preparing SiC membranes, which includes the steps of precursor selection, coating/shaping, curing for cross-linking, and pyrolysis. Among these steps, the precursor, curing method, and pyrolysis temperature significantly impact the final microstructures and separation performance of membranes. Based on our discussion of these influencing factors, there is now a good understanding of the evolution of membrane microstructures and how to control membrane microstructures according to the application purpose. In addition, the thermal stability, oxidation resistance, hydrothermal stability, and chemical resistance of the SiC membranes are described. Due to their robust advantages and high separation performance, SiC membranes are the most promising candidates for high-temperature gas separation. Overall, this review will provide meaningful insight and guidance for developing SiC membranes and achieving excellent gas separation performance.
在过去几十年中，用于气体分离的碳化硅（SiC）膜的研发和应用规模迅速扩大。鉴于其重要性，本综述通过聚焦SiC膜的制备方法及其应用，总结了气体分离用SiC膜的研究进展。制备SiC膜的先驱体衍生陶瓷方法包括化学气相沉积（CVD）/化学气相渗透（CVI）沉积以及聚合物先驱体的热解。一般来说，采用CVD/CVI沉积路线形成的SiC膜具有致密结构，使得这类膜适用于小分子气体分离。相反，聚合物先驱体的热解是制备SiC膜最常见且最具前景的路线，该路线包括先驱体选择、涂覆/成型、交联固化以及热解等步骤。在这些步骤中，先驱体、固化方法和热解温度对膜的最终微观结构和分离性能有显著影响。基于我们对这些影响因素的讨论，目前对于膜微观结构的演变以及如何根据应用目的控制膜微观结构已经有了较好的理解。此外，还描述了SiC膜的热稳定性、抗氧化性、水热稳定性和耐化学性。由于其强大的优势和高分离性能，SiC膜是高温气体分离最有前景的候选材料。总体而言，本综述将为开发SiC膜并实现优异的气体分离性能提供有意义的见解和指导。
