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通过氮掺杂增强非晶碳化硅薄膜的红色发射。

Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping.

作者信息

Chen Guangxu, Chen Sibin, Lin Zewen, Huang Rui, Guo Yanqing

机构信息

School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China.

出版信息

Micromachines (Basel). 2022 Nov 22;13(12):2043. doi: 10.3390/mi13122043.

DOI:10.3390/mi13122043
PMID:36557342
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9786742/
Abstract

The enhanced red photoluminescence (PL) from Si-rich amorphous silicon carbide (a-SiC) films was analyzed in this study using nitrogen doping. The increase in nitrogen doping concentration in films results in the significant enhancement of PL intensity by more than three times. The structure and bonding configuration of films were investigated using Raman and Fourier transform infrared absorption spectroscopies, respectively. The PL and analysis results of bonding configurations of films suggested that the enhancement of red PL is mainly caused by the reduction in nonradiative recombination centers as a result of the weak Si-Si bonds substituted by Si-N bonds.

摘要

本研究利用氮掺杂对富硅非晶碳化硅（a-SiC）薄膜增强的红色光致发光（PL）进行了分析。薄膜中氮掺杂浓度的增加导致PL强度显著增强，增强幅度超过三倍。分别使用拉曼光谱和傅里叶变换红外吸收光谱对薄膜的结构和键合构型进行了研究。薄膜的PL和键合构型分析结果表明，红色PL的增强主要是由于Si-Si键被Si-N键取代，导致非辐射复合中心减少所致。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1ec/9786742/9e0682cca245/micromachines-13-02043-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1ec/9786742/b46d90376055/micromachines-13-02043-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1ec/9786742/c234fd3125ef/micromachines-13-02043-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1ec/9786742/bf40311c6a1f/micromachines-13-02043-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1ec/9786742/ceb1c32cbd9f/micromachines-13-02043-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1ec/9786742/9e0682cca245/micromachines-13-02043-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1ec/9786742/b46d90376055/micromachines-13-02043-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1ec/9786742/c234fd3125ef/micromachines-13-02043-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1ec/9786742/bf40311c6a1f/micromachines-13-02043-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1ec/9786742/ceb1c32cbd9f/micromachines-13-02043-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1ec/9786742/9e0682cca245/micromachines-13-02043-g005.jpg

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本文引用的文献

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Opt Express. 2022 Apr 11;30(8):12308-12315. doi: 10.1364/OE.453086.
2
Enhancing light emission of Si nanocrystals by means of high-pressure hydrogenation.通过高压氢化增强硅纳米晶体的发光。
Opt Express. 2020 Aug 3;28(16):23320-23328. doi: 10.1364/OE.396654.
3
Defect Emission and Optical Gain in SiCO:H Films.SiCO:H 薄膜中的缺陷发射和光学增益。
ACS Appl Mater Interfaces. 2017 Jul 12;9(27):22725-22731. doi: 10.1021/acsami.7b06118. Epub 2017 Jun 30.
4
Silicon Nanoparticles with Surface Nitrogen: 90% Quantum Yield with Narrow Luminescence Bandwidth and the Ligand Structure Based Energy Law.表面含氮的硅纳米粒子：90%的量子产率，窄的荧光带宽和基于配体结构的能量定律。
ACS Nano. 2016 Sep 27;10(9):8385-93. doi: 10.1021/acsnano.6b03113. Epub 2016 Aug 30.
5
Dominant luminescence is not due to quantum confinement in molecular-sized silicon carbide nanocrystals.主发光不是由于分子尺寸碳化硅纳米晶中的量子限制。
Nanoscale. 2015 Jul 7;7(25):10982-8. doi: 10.1039/c5nr01204j. Epub 2015 Jun 9.
6
Enhancement in electron transport and light emission efficiency of a Si nanocrystal light-emitting diode by a SiCN/SiC superlattice structure.通过 SiCN/SiC 超晶格结构提高 Si 纳米晶体发光二极管的电子输运和光发射效率。
Nanoscale Res Lett. 2013 Jan 5;8(1):14. doi: 10.1186/1556-276X-8-14.
7
Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride.密集硅纳米点嵌入氮化硅中强白光电致发光的起源。
Opt Lett. 2012 Feb 15;37(4):692-4. doi: 10.1364/OL.37.000692.