Song Jie, Huang Rui, Zhang Yi, Lin Zewen, Zhang Wenxing, Li Hongliang, Song Chao, Guo Yanqing, Lin Zhenxu
School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China.
Micromachines (Basel). 2019 Sep 27;10(10):649. doi: 10.3390/mi10100649.
The effect of nitrogen doping on the photoluminescence (PL) of amorphous SiCO films was investigated. An increase in the content of nitrogen in the films from 1.07% to 25.6% resulted in red, orange-yellow, white, and blue switching PL. Luminescence decay measurements showed an ultrafast decay dynamic with a lifetime of ~1 ns for all the nitrogen-doped SiCO films. Nitrogen doping could also widen the bandgap of SiCO films. The microstructure and the elemental compositions of the films were studied by obtaining their Raman spectra and their X-ray photoelectron spectroscopy, respectively. The PL characteristics combined with an analysis of the chemical bonds configurations present in the films suggested that the switching PL was attributed to the change in defect luminescent centers resulting from the chemical bond reconstruction as a function of nitrogen doping. Nitrogen doping provides an alternative route for designing and fabricating tunable and efficient SiCO-based luminescent films for the development of Si-based optoelectronic devices.
研究了氮掺杂对非晶SiCO薄膜光致发光（PL）的影响。薄膜中氮含量从1.07%增加到25.6%，导致PL出现从红色、橙黄色、白色到蓝色的转变。发光衰减测量表明，所有氮掺杂的SiCO薄膜都具有超快衰减动力学，寿命约为1 ns。氮掺杂还可以拓宽SiCO薄膜的带隙。分别通过获得薄膜的拉曼光谱和X射线光电子能谱来研究薄膜的微观结构和元素组成。PL特性结合对薄膜中化学键构型的分析表明，PL的转变归因于随着氮掺杂化学键重构导致的缺陷发光中心的变化。氮掺杂为设计和制造用于硅基光电器件发展的可调谐且高效的SiCO基发光薄膜提供了一条替代途径。
