Johnson Karl, Alshamrani Naif, Almutairi Dhaifallah, Grieco Andrew, Horvath Cameron, Westwood-Bachman Jocelyn N, McKinlay Alexandria, Fainman Yeshaiahu
Opt Express. 2022 Dec 19;30(26):46134-46146. doi: 10.1364/OE.477102.
There is little literature characterizing the temperature-dependent thermo-optic coefficient (TOC) for low pressure chemical vapor deposition (LPCVD) silicon nitride or plasma enhanced chemical vapor deposition (PECVD) silicon dioxide at temperatures above 300 K. In this study, we characterize these material TOC's from approximately 300-460 K, yielding values of (2.51 ± 0.08) · 10K for silicon nitride and (5.67 ± 0.53) · 10K for silicon oxide at room temperature (300 K). We use a simplified experimental setup and apply an analytical technique to account for thermal expansion during the extraction process. We also show that the waveguide geometry and method used to determine the resonant wavelength have a substantial impact on the precision of our results, a fact which can be used to improve the precision of numerous ring resonator index sensing experiments.
关于低压化学气相沉积（LPCVD）氮化硅或等离子体增强化学气相沉积（PECVD）二氧化硅在高于300 K温度下的温度依赖热光系数（TOC），几乎没有文献进行描述。在本研究中，我们对这些材料在大约300 - 460 K范围内的TOC进行了表征，在室温（300 K）下，氮化硅的TOC值为(2.51 ± 0.08)·10⁻⁴ K，氧化硅的TOC值为(5.67 ± 0.53)·10⁻⁴ K。我们使用了一种简化的实验装置，并应用一种分析技术来考虑提取过程中的热膨胀。我们还表明，用于确定谐振波长的波导几何结构和方法对我们结果的精度有重大影响，这一事实可用于提高众多环形谐振器折射率传感实验的精度。
