Zhu Zhehao, Kim Joon-Seok, Moody Michael J, Lauhon Lincoln J
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States.
ACS Nano. 2023 Jan 10;17(1):575-586. doi: 10.1021/acsnano.2c09527. Epub 2022 Dec 27.
Inks based on two-dimensional (2D) materials could be used to tune the properties of printed electronics while maintaining compatibility with scalable manufacturing processes. However, a very wide range of performances have been reported in printed thin-film transistors in which the 2D channel material exhibits considerable variation in microstructure. The lack of quantitative physics-based relationships between film microstructure and transistor performance limits the codesign of exfoliation, sorting, and printing processes to inefficient empirical approaches. To rationally guide the development of 2D inks and related processing, we report a gate-dependent resistor network model that establishes distinct microstructure-performance relationships created by near-edge and intersheet resistances in printed van der Waals thin-film transistors. The model is calibrated by analyzing electrical output characteristics of model transistors consisting of overlapping 2D nanosheets with varied thicknesses that are mechanically exfoliated and transferred. Kelvin probe force microscopy analysis on the model transistors leads to the discovery that the nanosheet edges, not the intersheet resistance, limit transport due to their impact on charge carrier depletion and scattering. Our model suggests that when transport in a 2D material network is limited by the near-edge resistance, the optimum nanosheet thickness is dictated by a trade-off between charged impurity screening and gate screening, and the film mobilities are more sensitive to variations in printed nanosheet density. Removal of edge states can enable the realization of higher mobilities with thinner nanosheets due to reduced junction resistances and reduced gate screening. Our analysis of the influence of nanosheet edges on the effective film mobility not only examines the prospects of extant exfoliation methods to achieve the optimum microstructure but also provides important perspectives on processes that are essential to maximizing printed film performance.
基于二维(2D)材料的墨水可用于调节印刷电子产品的性能,同时保持与可扩展制造工艺的兼容性。然而,在印刷薄膜晶体管中已报道了非常广泛的性能,其中二维沟道材料的微观结构存在相当大的变化。薄膜微观结构与晶体管性能之间缺乏基于定量物理的关系,这使得剥落、分选和印刷工艺的协同设计局限于低效的经验方法。为了合理指导二维墨水及相关工艺的发展,我们报告了一种栅极依赖电阻网络模型,该模型建立了由印刷范德华薄膜晶体管中的近边缘电阻和层间电阻产生的不同微观结构 - 性能关系。通过分析由机械剥落和转移的不同厚度重叠二维纳米片组成的模型晶体管的电输出特性,对该模型进行了校准。对模型晶体管的开尔文探针力显微镜分析发现,纳米片边缘而非层间电阻限制了传输,因为它们对电荷载流子耗尽和散射有影响。我们的模型表明,当二维材料网络中的传输受近边缘电阻限制时,最佳纳米片厚度由带电杂质屏蔽和栅极屏蔽之间的权衡决定,并且薄膜迁移率对印刷纳米片密度的变化更敏感。由于结电阻降低和栅极屏蔽减少,去除边缘态可以通过更薄的纳米片实现更高的迁移率。我们对纳米片边缘对有效薄膜迁移率影响的分析不仅考察了现有剥落方法实现最佳微观结构的前景,还为最大化印刷薄膜性能所必需的工艺提供了重要观点。