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基于卤化镉双向热扩散处理的高效碳基CsPbI₂Br钙钛矿太阳能电池。

High-Efficiency Carbon-based CsPbI Br Perovskite Solar Cells from Dual Direction Thermal Diffusion Treatment with Cadmium Halides.

作者信息

Qiu Xiaosong, Xu Yuan, Li Ruoshui, Jing Yu, Yan Zhongliang, Liu Fengli, Wu Liyu, Tu Yongsheng, Shi Jialiang, Du Zhenbo, Wu Jihuai, Lan Zhang

机构信息

College of Materials Science & Engineering, Huaqiao University, Xiamen, 361021, P. R. China.

Engineering Research Center of Environment-Friendly Functional Materials, Ministry of Education, Xiamen, 361021, P. R. China.

出版信息

Small. 2023 Mar;19(12):e2206245. doi: 10.1002/smll.202206245. Epub 2023 Jan 1.

Abstract

In recent years, carbon-based CsPbI Br perovskite solar cells (PSCs) have attracted more attention due to their low cost and good stability. However, the power conversion efficiency (PCE) of carbon-based CsPbI Br PSCs is still no more than 16%, because of the defects in CsPbI Br or at the interface with the electron transport layer (ETL), as well as the energy level mismatch, which lead to the loss of energy, thus limiting PCE values. Herein, a series of cadmium halides are introduced, including CdCl , CdBr and CdI for dual direction thermal diffusion treatment. Some Cd ions thermally diffuse downward to passivate the defects inside or on the surface of SnO ETL. Meanwhile, the energy level structure of SnO ETL is adjusted, which is in favor of the transfer of electron carriers and blocking holes. On the other hand, part of Cd and Cl ions thermally diffuse upward into the CsPbI Br lattice to passivate crystal defects. Through dual direction thermal diffusion treatment by CdCl , CdI and CdBr , the performance of devices has been significantly improved, and their PCE has been increased from 13.01% of the original device to 14.47%, 14.31%, and 13.46%, respectively. According to existing reports, 14.47% is one of the highest PCE of carbon-based CsPbI Br PSCs with SnO ETLs.

摘要

近年来,碳基CsPbI Br钙钛矿太阳能电池(PSC)因其低成本和良好的稳定性而备受关注。然而,碳基CsPbI Br PSC的功率转换效率(PCE)仍不超过16%,这是由于CsPbI Br中或与电子传输层(ETL)界面处存在缺陷,以及能级不匹配,导致能量损失,从而限制了PCE值。在此,引入了一系列卤化镉,包括CdCl、CdBr和CdI进行双向热扩散处理。一些Cd离子向下热扩散以钝化SnO ETL内部或表面的缺陷。同时,调整了SnO ETL的能级结构,这有利于电子载流子的转移并阻挡空穴。另一方面,部分Cd和Cl离子向上热扩散进入CsPbI Br晶格以钝化晶体缺陷。通过CdCl、CdI和CdBr的双向热扩散处理,器件性能得到显著改善,其PCE分别从原始器件的13.01%提高到14.47%、14.31%和13.46%。根据现有报道,14.47%是具有SnO ETL的碳基CsPbI Br PSC的最高PCE之一。

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