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通过有机和离子混合钝化提高全无机CsPbI Br钙钛矿太阳能电池的效率和稳定性。

Enhanced Efficiency and Stability of All-Inorganic CsPbI Br Perovskite Solar Cells by Organic and Ionic Mixed Passivation.

作者信息

He Jian, Su Jie, Lin Zhenhua, Ma Jing, Zhou Long, Zhang Siyu, Liu Shengzhong, Chang Jingjing, Hao Yue

机构信息

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, China.

Advanced Interdisciplinary Research Center for Flexible Electronics, Xidian University, 2 South Taibai Road, Xi'an, 710071, China.

出版信息

Adv Sci (Weinh). 2021 Sep;8(17):e2101367. doi: 10.1002/advs.202101367. Epub 2021 Jun 30.

Abstract

All-inorganic perovskites have been intensively investigated as potential optoelectronic materials because of their excellent thermal stability, especially for CsPbI Br. Herein, the authors studied the effects of mixed passivation utilizing organic phenylethylammonium bromide and inorganic ionic cesium bromide (PEABr + CsBr) on the all-inorganic perovskite (CsPbI Br) solar cells for the first time. The treatment with different passivation mechanisms enhances the perovskite film quality, resulting in uniform surface morphology and compact film with low trap density. Besides, the passivation improves the energy level alignment, which benefits the hole extraction at the perovskite/HTL interface and drives the interface electron separation, suppressing the charge recombination and realizing a high open-circuit voltage (V ). Finally, the device represents a high power conversion efficiency (PCE) of 16.70%, a V of 1.30 V, and an excellent fill factor (FF) of 0.82. The V loss and high FF should be among the best values for CsPbI Br based devices. Furthermore, the treated devices exhibit remarkable long-term stability with only 8% PCE loss after storing in a glove box for more than 1000 h without encapsulation.

摘要

全无机钙钛矿因其优异的热稳定性,尤其是CsPbIBr,作为潜在的光电子材料受到了广泛研究。在此,作者首次研究了利用有机溴化苯乙铵和无机离子溴化铯(PEABr + CsBr)进行混合钝化对全无机钙钛矿(CsPbIBr)太阳能电池的影响。采用不同钝化机制的处理提高了钙钛矿薄膜质量,产生了均匀的表面形貌和低陷阱密度的致密薄膜。此外,钝化改善了能级排列,有利于在钙钛矿/HTL界面处的空穴提取,并驱动界面电子分离,抑制电荷复合,实现高开路电压(V)。最终,该器件呈现出16.70%的高功率转换效率(PCE)、1.30 V的V和0.82的优异填充因子(FF)。V损失和高FF应该是基于CsPbIBr的器件中的最佳值之一。此外,经过处理的器件表现出显著的长期稳定性,在未封装的手套箱中储存超过1000小时后,PCE损失仅为8%。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f699/8425869/bdcf5371072b/ADVS-8-2101367-g002.jpg

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